Transmission electron microscope sample table of in-situ measurement nanometer device

Abstract

The invention discloses a transmission electron microscope sample table of an in-situ measurement nanometer device. The transmission electron microscope sample table comprises a metal nanoprobe, an insulating plug piece and a sample supporting table, wherein the front and reverse surfaces of the insulating plug piece are provided with a plurality of metal electrodes respectively; the corresponding metal electrodes are conductively connected through metallized through holes; one end of the sample supporting table is connected with the insulating plug piece, and the other end of the sample supporting table is provided with a sampling region and a testing region; the testing region is a metal electrode which is arranged on the surface of the sample supporting table and is suspending; the metal electrode of the sample supporting table is conductively connected with the metal electrode of the insulating plug piece; the metal nanoprobe, the testing region metal electrode and a tested sample form a three-end field effect transistor. According to the transmission electron microscope sample table, the sample can be observed under the atomic-scale resolution and electrical measurement is performed in real time, and the electrical property and the nanostructure change of a unit to be measured are disclosed in situ.

Description

[0001] technical field [0002] The invention belongs to the field of in-situ measurement of nano-device performance, and in particular relates to a multi-electrode transmission electron microscope sample stage for in-situ measurement of the electrical properties and atomic structure of graphene field effect tubes. A multi-electrode device construction area and a nanomaterial sampling area are prepared on the sample. Background technique [0003] In the field of nanoelectronic devices, graphene two-dimensional materials are considered to be the successor of silicon. Graphene is a monoatomic layer planar film composed of carbon atoms, which has the characteristics of high conductivity, high strength, and ultra-thin. To study the electrical response and physical morphology changes of graphene-based field-effect transistors under an applied electric field state, and to collect data on their electrical characteristics is the basic goal of current design and development of graph...

AI Technical Summary

Problems solved by technology

Existing technology cannot meet the measurement of multi-electrode nanodevices

Transmission electron microscopy is a powerful tool for studying the structure and properties of nanomaterials because it can observe samples at atomic-scale resolution. However, the space for placing samples between the pole pieces of the objective lens in transmission electron microscopy is very narrow, especially for sub-nanometer-scale resolution. The commercial spherical aberration transmission electron microscope is usually only about 2 or 3 mm. It is difficult to install multi-electrodes outside the sample rod and it is even more difficult to measure the electrical signal. Therefore, it is necessary to export the electrical signal to the outside of the electron microscope for measurement.

Under such conditions, how to construct in-situ graphene transistors is already very difficult

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