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Trench power device and manufacturing method thereof

A technology of power devices and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low breakdown voltage and poor sealing effect of trench power devices, and avoid the reduction of breakdown voltage , improve the filling effect, increase the effect of reflow time

Active Publication Date: 2017-06-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention provides a trench power device and a manufacturing method thereof to solve the problem in the prior art that the breakdown voltage of the trench power device is too low due to poor sealing effect of the second through hole in the guard ring area

Method used

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  • Trench power device and manufacturing method thereof
  • Trench power device and manufacturing method thereof
  • Trench power device and manufacturing method thereof

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Embodiment Construction

[0035] It can be seen from the background art that the sealing effect of the second through hole in the guard ring region formed in the prior art is not good, which may lead to subsequent ion implantation and cause the breakdown voltage of the trench power device to be too low. The inventors conducted research on the above problems and found that during the manufacture of trench power devices, depositing a layer of silicon nitride after the deposition of borophosphosilicate glass material can increase the reflow temperature of borophosphosilicate glass material or increase the reflow time, thereby The sealing effect of the second through hole in the guard ring area is improved.

[0036] After further research, the inventor proposed a trench power device and a manufacturing method thereof.

[0037] The trench power device and its manufacturing method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and speci...

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Abstract

The present invention provides a trench power device and a manufacturing method thereof, wherein the manufacturing method includes: providing a semiconductor substrate including an active region and a guard ring region; forming a gate structure; forming an interlayer dielectric layer, and A first through hole corresponding to the position of the source level of the trench power device and a second through hole corresponding to the position of the guard ring are formed thereon; the first ion implantation forms a well region and a guard ring; sequentially depositing borophosphosilicate The glass material and the isolation material form a side wall on the first through hole and seal the second through hole at the same time; perform a second ion implantation to form a source region; etch and fill the first through hole. In the present invention, a layer of isolation material is deposited after the borophosphosilicate glass material is deposited, and then the borophosphosilicate glass material is reflowed, which can increase the reflow temperature or increase the reflow time, and improve the filling effect of the second through hole in the protective ring area, thereby preventing Subsequent ion implantation affects the second through hole, improving the performance of the trench power device.

Description

technical field [0001] The invention relates to the field of semiconductor technology manufacturing, in particular to a trench power device and a manufacturing method thereof. Background technique [0002] In order to reduce the size of the power device and improve the performance of the power device, a trench structure is introduced into the power device to form a trench power device. Trench power devices are an important part of electronic circuits. In the off state, the breakdown voltage is high and the leakage current is small; in the on state, the on-resistance is low and the voltage of the conduction tube is reduced; , and has significant advantages such as low on-state loss, off-state loss and switching loss, and has become the main power device in the field of integrated circuits and other fields. [0003] figure 1 It is a structural schematic diagram of a trench power device in the prior art. Such as figure 1 As shown, a conventional trench power device includes...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 吴亚贞刘宪周
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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