Synthetic method for Cu2ZnSnS4 photosensitive thin-film material

A copper-zinc-tin-sulfur and photosensitive thin film technology, applied in tin compounds, chemical instruments and methods, inorganic chemistry, etc., can solve problems such as reducing the possibility of large-scale commercial production, and achieve easy control of film thickness, good consistency and The effect of uniformity and fast growth rate

Active Publication Date: 2013-12-04
SHAANXI COAL & CHEM TECH INST
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in its manufacturing process, highly toxic raw material hydrazine (NH 2 ·NH 2 ) are precursors for material synthesis, thereby reducing the possibility of large-scale commercial production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Synthetic method for Cu2ZnSnS4 photosensitive thin-film material
  • Synthetic method for Cu2ZnSnS4 photosensitive thin-film material
  • Synthetic method for Cu2ZnSnS4 photosensitive thin-film material

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0025] The preparation method step of copper-zinc-tin-sulfur film of the present invention:

[0026] 1) Preparation of copper-zinc-tin-sulfur nanoparticle solution

[0027] Step 1. Weigh copper sulfate pentahydrate crystals, zinc sulfate heptahydrate crystals, tin sulfate dihydrate crystals, and sodium sulfide nonahydrate crystals with a molar ratio of 2:1:1:4 for analytical purity.

[0028] Step 2, adding the copper sulfate pentahydrate crystals weighed in step 1, zinc sulfate heptahydrate crystals, and tin sulfate dihydrate crystals into an appropriate amount of ethylene glycol of analytical purity to obtain a zinc sulfate molar concentration of 5-15 millimoles / liter of solution A. The organic solvent here can be selected from any one of ethylene glycol, ethanol, methanol, propanol, butanol, tert-butanol, isopropanol, isoamyl alcohol and n-butanol, but is not limited thereto;

[0029] Step 3, adding the sodium sulfide nonahydrate crystals taken by step 1 into an appropri...

Embodiment

[0042]Step 1, the copper sulfate pentahydrate crystal of analytical purity, the zinc sulfate heptahydrate crystal of analytical purity, the tin sulfate dihydrate crystal are joined in the ethylene glycol of analytical purity in the order of 2:1:1 with molar ratio, Making zinc sulfate molar concentration is the solution A of 10 mmol / liter;

[0043] Step 2. Mix the solution A obtained in step 1 and place it in a 100-ml small flask, heat it to 190° C., and simultaneously feed high-purity argon (purity>99.99%) into the solution at a flow rate of 2 ml / min;

[0044] Step 3, dissolving the sodium sulfide nonahydrate crystal of analytical purity in 10 milliliters of ethylene glycol of analytical purity (equal with the ethylene glycol amount used in step 1), described copper sulfate pentahydrate crystal, sulfuric acid heptahydrate The molar ratio of zinc crystal, tin sulfate dihydrate crystal and sodium sulfide nonahydrate crystal is 2:1:1:4;

[0045] Step 4, adding the solution obtai...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
The average diameteraaaaaaaaaa
Login to view more

Abstract

A synthetic method for Cu2ZnSnS4 photosensitive thin-film material is characterized by comprising the following steps: dissolving blue vitriol crystal, white vitriol crystal and dihydrate tin sulphate crystal in alcohol organic solvent to obtain solution A with the molarity of zinc sulfate of 5-15 millimole / L; placing the solution A in a flask and heating up to the temperature of 170-210 DEG C, and inletting argon into the solution A simultaneously while heating; after the heating, dropwise adding sodium sulphide solution into the solution A, still standing and natural cooling to obtain solution B generating Cu2ZnSnS4 nano-particles; heating the solution B up to the temperature of 80-120 DEG C, dropwise adding dispersing agent, still standing and cooling, wherein the obtained solution B is divided into an upper layer and a lower layer, and the upper layer black liquid is Cu2ZnSnS4 nano solution, and manufacturing the separated black liquid of Cu2ZnSnS4 nano solution into thin films.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor thin-film solar cells, and is a new type of non-toxic and low-cost copper-zinc-tin-sulfur (Cu 2 ZnSnS 4 ) Synthetic method of photosensitive thin film material. 【Background technique】 [0002] Solar cells are considered to be one of the most effective solutions to the energy crisis. At present, industrialized solar cell products are basically all packaged in glass, which is heavy and cannot be folded, curled or changed in shape, causing great difficulties in transportation and installation. Thin-film solar cells have the advantages of less material consumption, low cost, light weight, flexible substrates can be used, and are suitable for special occasions. In recent years, it has attracted widespread attention from the scientific and industrial circles and has become a research hotspot. [0003] Copper indium gallium selenide (CIGS) thin film solar cells have achieved conversion efficiencies as ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01G19/00H01L31/18H01L31/032
CPCY02P70/50
Inventor 常远程
Owner SHAANXI COAL & CHEM TECH INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products