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Method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, lighting devices, etc., and can solve problems such as changes in transistor electrical characteristics and electric rate changes

Inactive Publication Date: 2013-10-23
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, when hydrogen or moisture used to form an electron donor is mixed into the oxide semiconductor during the device manufacturing process, it may cause changes in conductivity
This phenomenon is the main cause of fluctuations in the electrical characteristics of transistors using oxide semiconductors

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0081] In this embodiment, refer to Figures 1A to 1C , Figures 2A to 2G , Figure 3A to Figure 3D A semiconductor device and a method of manufacturing the semiconductor device will be described.

[0082]

[0083] Figures 1A to 1C A structural example of the transistor 120 is shown. here, Figure 1A is a planar graph, and Figure 1B and Figure 1C respectively along the Figure 1A The cross-sectional views of the A-B section and the C-D section in the figure. Note that in Figure 1A In order to avoid complexity, some components of the transistor 120 (for example, the gate insulating film 110 ) are omitted.

[0084] Figures 1A to 1C The illustrated transistor 120 includes: an insulating film 102 over a substrate 100 ; a source electrode 104 a ; a drain electrode 104 b ; an oxide semiconductor film 108 ; a gate insulating film 110 ;

[0085] exist Figures 1A to 1C In the illustrated transistor 120 , the oxide semiconductor film 108 is an oxide semiconductor fil...

Embodiment approach 2

[0162] In this embodiment, refer to Figures 4A to 4F with Figure 5A to Figure 5C Another example of a method of manufacturing a semiconductor device will be described.

[0163]

[0164] The structure of the semiconductor device manufactured by the manufacturing method of this embodiment is the same as that of the transistor 120 of the above-mentioned embodiment. That is, the semiconductor device includes: an insulating film 102 on a substrate 100; a source electrode 104a; a drain electrode 104b; an oxide semiconductor film 108; a gate insulating film 110; Figures 1A to 1C ).

[0165] As described in the above embodiments, in the transistor 120 , the oxide semiconductor film 108 is an oxide semiconductor film subjected to an oxygen doping process. In addition, in this embodiment, oxygen doping treatment is also performed on the insulating film 102 and the gate insulating film 110 . Through the oxygen doping treatment described above, the transistor 120 with further imp...

Embodiment approach 3

[0240] In this embodiment, refer to Figures 6A to 6F Another example of a method of manufacturing a semiconductor device will be described.

[0241]

[0242] The structure of the semiconductor device manufactured by the manufacturing method of this embodiment is the same as that of the transistor 120 of the above-mentioned embodiment. That is, the semiconductor device includes: an insulating film 102 on a substrate 100; a source electrode 104a; a drain electrode 104b; an oxide semiconductor film 108; a gate insulating film 110; Figures 1A to 1C ).

[0243] As described in the above embodiments, in the transistor 120 , the oxide semiconductor film 108 is an oxide semiconductor film subjected to an oxygen doping process. In addition, in this embodiment, oxygen doping treatment is also performed on the insulating film 102 and the gate insulating film 110 . Through the oxygen doping treatment described above, the transistor 120 with further improved reliability can be reali...

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Abstract

One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically connected to the source and drain electrodes are formed over the first insulating film; heat treatment is performed on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed; oxygen doping treatment is performed on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film; a second insulating film is formed over the oxide semiconductor film; and a gate electrode is formed over the second insulating film so as to overlap with the oxide semiconductor film.

Description

[0001] This divisional application is a divisional application based on the Chinese patent application with the application number 201180020397.5, the application date is April 7, 2011, and the invention title is "Method for Manufacturing Semiconductor Device". technical field [0002] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. [0003] In this specification, a semiconductor device refers to all devices that can operate by utilizing semiconductor characteristics, and thus electro-optical devices, semiconductor circuits, and electronic equipment are all semiconductor devices. Background technique [0004] A technique of constituting a transistor using a semiconductor thin film formed on a substrate having an insulating surface has attracted attention. The transistor is widely used in electronic devices such as integrated circuits (ICs) and image display devices (display devices). Silicon-based semiconducto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/34H01L21/383H01L29/786H05B44/00H10B12/00H10B41/70H10B69/00
CPCH01L29/78603H01L29/78H01L29/7869H01L29/4908H01L27/1225H01L21/383H01L29/66742H01L21/477H01L29/263H01L29/66969H01L27/1255
Inventor 山崎舜平
Owner SEMICON ENERGY LAB CO LTD
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