Scintillation screen structure for X-ray radiation detector
A radiation detector and scintillation screen technology, applied in the field of X-ray detectors, can solve problems such as poor performance, reduced image resolution, and low packaging process efficiency, and achieve excellent light transmittance, improved reflectivity, and excellent water resistance. The effect of waterproof performance
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Embodiment 1
[0014] The X-ray radiation detector described in this embodiment uses a scintillation screen structure, and the substrate is polysilicon; a cesium iodide hybrid film is deposited on the polysilicon substrate by a laser evaporation process, and the cesium iodide hybrid film is doped A cesium iodide thick film doped with thallium and boron; and a transparent water-blocking film deposited on the cesium iodide thick film. The process of the laser evaporation is as follows: 99wt% CsI crystal powder, 0.98wt% TaI crystal powder and 0.02wt% B 2 o 3 After it is mixed evenly, it is pressed into a thin sheet as a target material; then a Nd:YAG laser is used, and the laser pulse power of the Nd:YAG laser is 10 7 W / cm 2 , the frequency is 2000Hz, the pulse width is 100ns, the scanning speed is 5-10 cm / s, the distance between the substrate and the target is 72.5 cm, the deposition temperature is 350°C, and the thickness of the deposited cesium iodide hybrid film is 0.5mm, where doped wi...
Embodiment 2
[0016] The X-ray radiation detector described in this embodiment uses a scintillation screen structure, and the substrate is polysilicon; a silicon dioxide transition layer is first deposited on the polysilicon substrate, and the silicon dioxide transition layer is deposited by a magnetron sputtering process , the conditions of the magnetron sputtering process are as follows: the target material is silicon dioxide; the sputtering gas is O 2 and Ar, O 2 The volume ratio of Ar and Ar is 1:5; the sputtering power density is 500 W, and the pressure of sputtering gas is 5×10 -3 Torr, the silicon substrate temperature is 80°C, and the deposition thickness is 200 nm. Then a cesium iodide hybrid film is deposited by a laser evaporation process, and the cesium iodide hybrid film is a cesium iodide thick film doped with thallium and boron; and a transparent water-blocking film is deposited on the cesium iodide thick film membrane. The process of the laser evaporation is as follows:...
Embodiment 3
[0018] The X-ray radiation detector described in this embodiment uses a scintillation screen structure, and the substrate is polysilicon; a silicon dioxide transition layer is first deposited on the polysilicon substrate, and the silicon dioxide transition layer is deposited by a magnetron sputtering process , the conditions of the magnetron sputtering process are as follows: the target material is silicon dioxide; the sputtering gas is O 2 and Ar, O 2 The volume ratio of Ar and Ar is 1:5; the sputtering power density is 300 W, and the pressure of sputtering gas is 3×10 -3 Torr, the silicon substrate temperature is 100°C, and the deposition thickness is 100 nm. Then, a cesium iodide hybrid film is deposited by a laser evaporation process, which is a cesium iodide thick film doped with thallium and boron; the process of the laser evaporation is as follows: 99wt% of the CsI crystal powder, 0.95wt% TaI crystal powder and 0.05wt% B 2 o 3 After it is mixed evenly, it is presse...
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