A kind of graphene field effect transistor and preparation method thereof

Abstract

The invention discloses a grapheme field effect transistor and a preparation method of the grapheme field effect transistor, and belongs to the technical field of nano-electronics. The grapheme field effect transistor comprises a semiconductor substrate, an insulation layer, a conductive passage, a source electrode, a drain electrode, a grid medium layer and a grid electrode, wherein the insulation layer is formed on the semiconductor substrate, the conductive passage is formed in the insulation layer and is composed of grapheme materials, the source electrode and the drain electrode are respectively formed at the two ends of the conductive passage, the grid medium layer covers the source electrode, the drain electrode and the conductive passage between the source electrode and the drain electrode, and the grid electrode is located on the grid medium layer. The grapheme field effect transistor and the preparation method of the grapheme field effect transistor resolve the problem that a high dielectric constant grid medium film can not directly grow on the conductive passage formed by the grapheme materials by means of an atomic layer deposition method, the oxidized grapheme not only provides the nucleation center for deposition of an atomic layer, the carrier mobility of the grapheme materials will not obviously decrease at the same time, and the performance of elements will not decrease.

Description

Technical field [0001] The invention belongs to the field of field effect transistor manufacturing technology, and specifically relates to a graphene field effect transistor and a preparation method thereof. Background technique [0002] Since graphene was successfully developed in 2004, graphene electronic devices have made great progress. Graphene-based electronics has the characteristics of small size, fast speed, low power consumption, and simple process, and has attracted more and more attention. Graphene is expected to replace silicon as the next generation of semiconductor materials. [0003] The performance of field-effect transistors is affected by two most important factors. One is the material properties, which determine the potential of device performance; the other is the gate dielectric material. Since it is in direct contact with the channel, the performance of the gate dielectric will directly affect For the performance of the entire device, high-performance field-...

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Problems solved by technology

However, no matter which treatment method is used, an additional scattering mechanism will be introduced to graphene, which will reduce the carrier mobility and degrade the device performance.

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