Cleaning agent for antireflective coating of organic light-emitting micro-display and cleaning process

Abstract

The invention relates to the field of organic light emitting, and in particular relates to a cleaning agent used in a stripping and cleaning technique and a photoetching reworking technique in the process of manufacturing an organic light-emitting display. The cleaning agent is formed by mixing N-methylpyrrolidone, isopropanol and an organic amine solution according to the volume ratio of 15:4:1 to 15:4:4. A method for cleaning by the cleaning agent for an antireflective coating of the organic light-emitting micro-display comprises the following steps of: preparing the cleaning agent, soaking an IC (Integrated Circuit) wafer of the anode-stripped organic light-emitting diode or a to-be-reworked wafer in the cleaning solution for the antireflective layer for 3-15 minutes at 15-25 DEG C to dissolve the antireflective layer, soaking the IC wafer of the anode-stripped organic light-emitting display or the to-be-reworked wafer in isopropanol for 5-20 minutes to remove residual photoresist, N-methylpyrrolidone, and organic amine, and cleaning the IC wafer of the organic light-emitting display or the to-be-reworked wafer sequentially by isopropanol, pure water and mega sound. The cleaning agent has the advantages of complete cleaning, no corrosion and no residue, and is especially suitable for cleaning of the anode antireflective layer of the organic light-emitting display.

Description

technical field [0001] The invention relates to the field of organic luminescence, in particular to a cleaning agent used in a peeling cleaning process and a photolithography rework process in the manufacturing process of an organic luminescent display. Background technique [0002] In the manufacturing process of organic light-emitting displays, it is necessary to use a double-layer glue photolithography (one layer of photoresist, one layer of anti-reflection layer) process with an anti-reflection layer to ensure the graphic quality of the anode lift-off process. However, the anti-reflection layer under the photoresist is difficult to be dissolved by a common solvent under the condition that the anode is not damaged, so that after the stripping and cleaning process, the anti-reflection layer still remains in the anode pixel, resulting in many defects. The use of other solvents will cause secondary pollution and corrosion on the surface of the metal anode, affecting the fina...

AI Technical Summary

Problems solved by technology

However, the anti-reflection layer under the photoresist is difficult to be dissolved by a common solvent under the condition that the anode is not damaged, so that after the stripping and cleaning process, the anti-reflection layer still remains in the anode pixel, resulting in many defects. The use of other solvents will cause secondary pollution and corrosion on the surface of the metal anode, affecting the final luminous effect and yield

Also due to the existence of the anti-reflection layer photoresist, the photolithography process faces many difficulties in the rework process.