Semi-insolating GaAs photoconductive antenna with ohmic contact electrodes
An ohmic contact electrode, photoconductive antenna technology, applied in the direction of antenna, antenna support/installation device, electrical components, etc., can solve the problem of low emission efficiency of photoconductive antenna, improve radiation efficiency and radiation power, and improve emission efficiency , the effect of increasing the breakdown electric field
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[0024] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0025] see figure 1 , the present invention has the semi-insulated GaAs photoconductive antenna of AuGeNi alloy ohmic contact electrode, comprises semi-insulated gallium arsenide substrate, on the semi-insulated gallium arsenide substrate are positive and negative two AuGeNi alloy electrodes, semi-insulated gallium arsenide substrate It can be regarded as a resistor R with a large resistance GaAs , the contact resistance between the two AuGeNi alloy electrodes and the substrate material can be regarded as two resistors with small resistance R Ohm , resistor R GaAs with two resistors R Ohm in series, R Ohm GaAs . Resistance R GaAs The resistance value is from several megohms to hundreds of megohms, while R Ohm The resistance is less than 1 ohm. due to R Ohm GaA , s R Ohm Ignorable.
[0026] The substrate material of the pho...
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