Special equipment and method for diffusing antimony latex source buried layer

A special equipment, layer diffusion technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of large process compatibility, large transistor saturation voltage drop, complex process, etc., to optimize the buried layer Diffusion technology, small relative deviation, easy process effect

Active Publication Date: 2013-07-10
FUJIAN ANTE MICROELECTRONICS CO LTD
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Problems solved by technology

However, the existing conventional buried layer diffusion has the following problems: some processes are complex, some have a great impact on subsequen

Method used

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  • Special equipment and method for diffusing antimony latex source buried layer
  • Special equipment and method for diffusing antimony latex source buried layer

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Embodiment

[0029] Diffusion high-temperature furnace 1 has three-zone temperature control with an accuracy of ±0.5°C. The purpose of the thermal diffusion process is to achieve a predetermined impurity concentration distribution through high-temperature heat treatment, which is characterized by the directly measurable sheet resistance and junction depth. For a certain diffusion method, in order to obtain the required sheet resistance and junction depth, it is mainly determined by the diffusion Process conditions: diffusion temperature, time, protective atmosphere and flow rate. After the technical conditions are determined by theoretical estimation and a large number of process tests, they are strictly controlled and implemented in mass production.

[0030] The present invention can use commercially available spectroscopically pure copolymerized type antimony latex impurity source (high-purity latex, dehydrated alcohol and antimony trioxide mixture), in 4 inch P-type single crystal silic...

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Abstract

The invention relates to special equipment and a method for diffusing an antimony latex source buried layer. According to the special equipment, a quartz diffusion tube is arranged in a diffusion high-temperature furnace; a gas inlet is formed at the front part of the quartz diffusion tube and connected with a uniform-flow quartz device; an exhaust port is formed at the rear part of the quartz diffusion tube; and the diffusion high-temperature furnace is divided into three areas, and a three-area temperature control device is arranged outside the furnace. According to the antimony latex source buried layer diffusion method, a low-resistance buried layer is prepared by use of a thermal diffusion method generally used on a process line, wherein the gluing speed is 2500-5000rpm; the diffusion conditions are that the optimal diffusion temperature is 1250 DEG C, the constant temperature time is 7 hours and the heating/cooling speed is 5 DEG C per minute; and the ratio of N2 to O2 in the protection atmosphere (diffusion atmosphere) is 8.8:1.8. According to the invention, the bipolar integrated circuit buried layer diffusion technology is optimized and can be popularized and applied to the diffusion of other bipolar discrete device buried layers, and can also be applied to a BiCMOS integrated circuit production line focusing on bipolar technology.

Description

technical field [0001] The invention relates to a special equipment and method for the diffusion of an antimony latex source buried layer. Background technique [0002] Buried layer diffusion (BLN+) is one of the essential processes in the manufacture of bipolar integrated circuits and bipolar process-based BiCMOS integrated circuits. On the surface, it is caused by the increase of the series resistance of the collector area and the increase of the saturation voltage drop of the transistor. Before the substrate epitaxy, it is necessary to form a low-resistance N ＋ The process of thin layer is buried layer diffusion to reduce the series resistance of the collector area and reduce the influence of parasitic pnp transistors, (see figure 1 shown). However, the existing conventional buried layer diffusion has the following problems: some processes are complex, some have a great impact on subsequent processes and require strict process compatibility, and some cause transistor sa...

Claims

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Application Information

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IPC IPC(8): H01L21/228
Inventor 黄福仁黄赛琴林吉申林志雄陈轮兴杨忠武
Owner FUJIAN ANTE MICROELECTRONICS CO LTD
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