In-situ tensile sample preparation method for mechanical performance testing of tsv copper interconnection materials

Abstract

The invention discloses a preparation method of an in-situ tensile sample for a TSV (through-silicon-via) copper-interconnection material mechanics performance test. The in-situ tensile sample comprises a TSV copper pillar, silicon slices arranged at two ends of the copper pillar and a clamping end; and the preparation method comprises the following steps of: firstly, cutting and fixing a silicon wafer with a TSV through hole / blind hole structure, then photo-etching and etching silicon slices to expose the middle part of the TSV copper pillar, and finally fixing the silicon slices at two ends of the TSV copper pillar to the clamping end, so as to form the in-situ tensile sample. The preparation method disclosed by the invention is simple, can conveniently and effectively performs the tensile performance test of the in-situ TSV copper pillar, solves the problem that both block and film samples cannot reflect the true mechanics performance of the micro-size TSV copper-interconnection material, and can provide effective data support for the reliability of the TSV.

Description

technical field [0001] The invention relates to the field of microelectronic packaging, in particular to an in-situ tensile sample preparation method for testing the mechanical properties of TSV copper interconnection materials. Background technique [0002] With the continuous improvement of the integration level of semiconductor circuits, the electronic packaging density is also increasing. In recent years, the three-dimensional packaging form that stacks multiple chips in the height direction and realizes electrical connection through silicon via (TSV) technology has developed rapidly and has become a new generation of electronic packaging technology. In this packaging structure, by stacking two or more layers of chips, not only can the integration of the circuit be greatly improved, but also the transmission distance of the circuit can be reduced, which is conducive to improving the integrity of the signal and reducing the loss of the signal. [0003] During the chip pa...

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Problems solved by technology

However, the size of the copper pillar is only micron, and its mechanical properties are very different from those of the macroscopic bulk material. The properties of the tiny sample cannot be inferred from the mechanical parameters such as the elastic modulus and tensile strength of the bulk material.

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