Grinding cushion, and grinding device and grinding method using grinding cushion

A grinding method and a technology of a grinding device, which are applied in the direction of grinding tools, etc., can solve the problems of increasing production costs, uneven grinding of the central area and edge area of ​​the wafer, etc., and achieve the effect of improving uniformity and improving production yield

Active Publication Date: 2013-07-03
SEMICON MFG INT (SHANGHAI) CORP
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above method solves the problem of uneven grinding between the central area and the edge area of ​​the wafer in the prior art by improving the grindi...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grinding cushion, and grinding device and grinding method using grinding cushion
  • Grinding cushion, and grinding device and grinding method using grinding cushion
  • Grinding cushion, and grinding device and grinding method using grinding cushion

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0045] In order to solve the above-mentioned technical problem, the present invention provides a kind of lapping pad that can grind wafer edge separately, according to one embodiment of the present invention, this lapping pad comprises:

[0046] The first grinding area is arranged on the edge of the grinding pad and is used for grinding the edge of the wafer;

[0047] a second grinding area, the second grinding area can accommodate at least the entire wafer, and is used for grinding the entire wafer surface;

[0048] Wherein, there is a groove between the first grinding area and the second grinding area of ​​the grinding pad.

[0049] figure 2It is a top view of a polishing pad according to an embodiment of the present invention. As shown in the figure, a plurality of first grinding areas 11 are arranged on the grinding pad 1, and the first grinding areas 11 are arranged at intervals on the edge of the grinding pad 1 and surround the second grinding area 12 of the grinding ...

Embodiment approach 2

[0061] According to another embodiment of the present invention, the present invention provides a grinding device including the above-mentioned grinding pad, and the grinding device further includes a first conveying device. The grinding pad is arranged on the grinding table, and the grinding pad includes a first grinding area for grinding the edge of the wafer, and a second grinding area for grinding the entire wafer surface; the first grinding area of ​​the grinding pad There is a groove between the second grinding area. The groove is used to isolate the grinding liquid from entering the second grinding area when grinding the edge of the wafer. In addition, the first grinding area, the second grinding area and the groove jointly form a shape of a grinding pad and correspond to a shape of the grinding table.

[0062] refer to Figure 7 , Figure 7 It is a cross-sectional view of a grinding device grinding a wafer according to an embodiment of the present invention. This g...

Embodiment approach 3

[0070] The grinding method of the present invention, which uses the above-mentioned grinding device to independently grind the edge of the wafer, will be described in detail below in conjunction with the accompanying drawings.

[0071] According to still another embodiment of the present invention, there is provided a polishing method using the polishing apparatus described above. Figure 9 It is a schematic flow chart of a grinding method using the above-mentioned grinding device according to an embodiment of the present invention. The grinding method includes:

[0072] Step S1, providing a grinding pad to be placed on the rotatable grinding table, the grinding pad includes a first grinding area and a second grinding area, and a groove is formed between the first grinding area and the second grinding area;

[0073] Step S2, providing a wafer, and loading the wafer on the grinding head;

[0074] Step S3, providing a first conveying device placed above the polishing pad, the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a grinding cushion, and a grinding device and a grinding method using the grinding cushion. The grinding cushion comprises first grinding areas and a second grinding area, wherein the first grinding areas are formed on the edge of the grinding cushion, and are used for grinding the edge of a wafer; the second grinding area can be used for at least accommodating an entire wafer surface, and is used for grinding the entire wafer; and grooves are formed between the first grinding areas and the second grinding area of the grinding cushion. The grinding device provided with the grinding cushion comprises a grinding table, a grinding head and a first conveying device, wherein the wafer is placed on the grinding cushion, and the edge of the wafer is contacted with the first grinding areas; the grinding table is kept static; the grinding head is rotated for grinding the edge of the wafer; and a liquid ejected by the first conveying device is only retained in the first grinding areas. Due to the adoption of the grinding cushion, the grinding device and the grinding method, the entire wafer surface can be ground, the edge of the wafer can be ground separately, the uniformity of the ground central area and the edge area of the wafer is improved, and the production yield of a semiconductor device is increased greatly.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a polishing pad used in a chemical mechanical polishing process, a polishing device and a polishing method using the polishing pad. Background technique [0002] The chemical mechanical polishing (CMP) process is a process technology that can provide global and local planarization of the wafer. The chemical mechanical polishing process has been widely used in the removal and planarization of interlayer dielectrics, metal layers or shallow trench isolation, and has become an important process in semiconductor manufacturing. [0003] The mechanism of CMP is to planarize the surface of the wafer through the relative movement between the wafer and the polishing pad under a certain pressure. figure 1 It is a schematic diagram of grinding a wafer by a grinding device of the prior art. When grinding a wafer, the wafer 7 is fixed on the grinding head, and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B24B37/20
Inventor 陈枫
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap