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Preparation method of organic nickel oxide resistance storage film and electrical property test method thereof

A technology for preparing resistive memory and thin films, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, instruments, etc., can solve the problems of complex process and expensive equipment, and achieve the effect of simple process, convenient operation and simple operation.

Inactive Publication Date: 2015-06-24
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing an organic nickel oxide resistance memory film, which solves the problems of expensive equipment and complicated processes in the existing preparation methods

Method used

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  • Preparation method of organic nickel oxide resistance storage film and electrical property test method thereof
  • Preparation method of organic nickel oxide resistance storage film and electrical property test method thereof
  • Preparation method of organic nickel oxide resistance storage film and electrical property test method thereof

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Effect test

preparation example Construction

[0032] The test method for the electrical properties of the organic nickel oxide resistance memory film prepared by the above preparation method, the specific steps are as follows:

[0033] Step 1. Connect the organic nickel oxide resistive memory film with four lead wires. The lead wires are incoming wires with a purity of 99.9%. Use metal indium to connect the lead wires to the test point using the indium pressing method, and two of the lead wires are connected to the top electrode platinum. The layer is separated and independent, and the other two leads are connected to the bottom electrode, which is separated and independent;

[0034] Step 2, fix the organic nickel oxide resistance memory film connected with four leads on the sample stage and put it into the material comprehensive physical property measuring instrument to measure its resistance change characteristics and fatigue characteristics. The material comprehensive physical property measuring instrument is set to ele...

Embodiment 1

[0038] Step 1, first mix nickel acetate, acetylacetone and ethylene glycol methyl ether at a molar ratio of 1:1:26 and stir for 6 hours. After fully dissolving, add nickel acetate, acetylacetone and acrylic acid at a molar ratio of 1:1:1 Acrylic acid, after stirring for 2 hours, aging for 24 hours, the organic nickel oxide sol was obtained;

[0039] Step 2, using the dipping and pulling method, using a pulling machine to pull the organic nickel oxide sol obtained in step 1 on the superconducting electrode substrate, and then drying it at room temperature to obtain an organic nickel oxide film;

[0040] Step 3, put the organic nickel oxide film obtained in step 2 into a vacuum degree of 1×10 -3 In the sputtering apparatus of Pa, the mask plate is fixed, the sputtering target material is platinum with a purity of 99.9%, and the top electrode is sputtered for 10 minutes to obtain an organic nickel oxide resistance memory film.

[0041] The organic nickel oxide film obtained in s...

Embodiment 2

[0047] Step 1, first mix nickel acetate, acetylacetone and ethylene glycol methyl ether at a molar ratio of 1:1:28 and stir for 5 hours. After fully dissolving, add nickel acetate, acetylacetone and acrylic acid at a molar ratio of 1:1:1 Acrylic acid, after stirring for 1.5h, aging for 22h, the organic nickel oxide sol was obtained;

[0048] Step 2, using the dipping and pulling method, using a pulling machine to pull the organic nickel oxide sol obtained in step 1 on the superconducting electrode substrate, and then drying it at room temperature to obtain an organic nickel oxide film;

[0049] Step 3, put the organic nickel oxide film obtained in step 2 into a vacuum degree of 1×10 -3 In the sputtering apparatus of Pa, the mask plate is fixed, the sputtering target material is platinum with a purity of 99.9%, and the top electrode is sputtered for 15 minutes to obtain an organic nickel oxide resistance memory film.

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Abstract

The invention discloses a preparation method of organic nickel oxide resistance storage film. The preparation method includes the steps of processing organic nickel oxide sol on a superconductive electrode substrate via sol-dip-coating method with a dip coater and drying the film at room temperature, and then sputtering a top electrode, and obtaining the organic nickel oxide resistance storage film. The invention further discloses an electrical property test method of the organic nickel oxide resistance storage film which is prepared with the preparation method. The test method includes the steps of connecting the organic nickel oxide resistance storage film with four leads, connecting the leads with test points through indium, fixing the film on a sampling platform, putting the film in a material physics property measurement instrument, testing the volt-ampere characteristic and fatigue of the film. The preparation method of organic nickel oxide resistance storage film has the advantages of high preparation efficiency, simple processing technology, convenient operation and low cost. The electrical property test method of the organic nickel oxide resistance storage film has the advantages of accurate temperature control and simple operation.

Description

technical field [0001] The invention belongs to the technical field of microelectronic organic materials, and relates to a method for preparing an organic nickel oxide resistance memory film, and also relates to a method for testing the electrical properties of the organic nickel oxide resistance memory film. Background technique [0002] The preparation method of the organic thin film in the organic thin film device is very important. The quality of the thin film prepared by different methods is different, which directly affects the efficiency of the device, and the preparation method directly affects the cost of device preparation in industrialization. With the development of organic thin film device preparation technology, the existing preparation technology mainly includes vacuum evaporation coating method and organic vapor phase deposition technology, the area of ​​the organic nickel oxide resistance memory film prepared by these two methods is large, and the preparation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00G01R31/00H10K99/00
Inventor 李颖赵高扬王娅静
Owner XIAN UNIV OF TECH
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