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Method for testing film thermal conductivity

A technology of thermal conductivity and thin film, applied in the field of double-end supported cantilever beam structure and its testing field, can solve the problems of difficult structural processing, unfavorable extraction of parameters to be measured, complex temperature rise expression of test structure, etc.

Active Publication Date: 2013-05-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0004] However, in most thin film thermal conductivity tests including the above test methods, the test structure uses a two-dimensional or even three-dimensional thermal conductivity test structure. Extracting the parameters to be measured, on the other hand, makes the structure processing difficult

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  • Method for testing film thermal conductivity

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Embodiment Construction

[0054] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0055] see figure 1 , figure 2 , for the test structure model, the test structure is a double-ended support cantilever beam, the cantilever beam is composed of an upper narrow and long metal resistance strip 10, a lower film to be tested 20 and support blocks 50 at both ends of the lower surface of the film to be tested 20, the metal The resistance bar 10 is also used as a heating resistor and a temperature measuring resistor, and the double-ended support cantilever beam structure is prepared by surface micromachining technology, and the support block 50 is a silicon chip or a sacrificial layer material, such as polyimide or silicon dioxide, The length of the cantilever beam (such as 200 μm) is ten times greater than the width (such as 8-20 μm) so that the length is much greater than the width so that the heat conduction problem of the struc...

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Abstract

The invention discloses a method for testing film thermal conductivity. The method comprises the steps that: (1) with a surface micromachining technology, a double-end support cantilever beam structure is prepared, wherein the double-end support cantilever beam structure is composed of a film to be tested, a metal resistor strip on the film to be tested, and supporting blocks positioned on two ends below the film to be tested; (2) a proper direct current I is applied on the metal resistor strip I, such that temperature increasing is formed on the double-end support cantilever beam through the heating effect of currents; and (3) when thermal balance is reached, stable temperature increasing distribution is formed on the double-end support cantilever beam; and thermal conductivity is calculated according to voltage change value delta U on two poles in the inner side of the metal resistor strip, or according to delta UTCR value. According to the invention, compared with a commonly used 3omega method film thermal performance test method, the test structure processing process and testing means of the one-dimensional cantilever beam direct current method are relatively simple, and assist in providing more precise results.

Description

technical field [0001] The invention relates to the technical field of thermal performance testing of materials, in particular to a double-end supported cantilever beam structure and a testing method for testing the thermal conductivity of a thin film. Background technique [0002] For modern integrated circuits and micro-sensing devices with doubled integration, the heat dissipation inside the device has increasingly become one of the main factors restricting the performance of the circuit and the device. The heat accumulation caused by poor heat dissipation often leads to the failure of the device. Therefore, it is very necessary to obtain the thermal performance parameters of the device structural unit and the functional films constituting the structural unit, especially the thermal conductivity parameters, because it provides the basis for the optimal device structure design and layout. For MEMS devices related to heat, such as the most typical uncooled infrared focal pl...

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Application Information

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IPC IPC(8): G01N25/18
Inventor 黎威志王军徐洁蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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