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Method for preparing bismuth vanadate/bismuth ferrite heterojunction film solar cells

A solar cell and heterojunction technology, which is applied in the manufacture of circuits, electrical components, and final products, to achieve superior photovoltaic performance, simple preparation methods, and good repeatability

Inactive Publication Date: 2013-05-01
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] So far, there is no method for preparing BVO / BFO heterojunction thin films and their solar cells on glass substrates

Method used

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  • Method for preparing bismuth vanadate/bismuth ferrite heterojunction film solar cells
  • Method for preparing bismuth vanadate/bismuth ferrite heterojunction film solar cells
  • Method for preparing bismuth vanadate/bismuth ferrite heterojunction film solar cells

Examples

Experimental program
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Effect test

Embodiment 1

[0029] First Bi(NO 3 ) 3 ·5H 2 O and Fe(NO 3 ) 3 9H 2 O (molar ratio according to Bi:Fe=1:1) configure BiFeO with DMF as solvent 3 Precursor solution, the concentration of the precursor solution is 0.2mL / cm 2 . Secondly, Bi(NO 3 ) 3 ·5H 2 O and NH 3 VO 3 (Molar ratio according to Bi:V=1:1) proportionally and dissolved in DMF with the assistance of citric acid, acetic acid and ethanolamine, BiVO 4 precursor solution. BiVO was then prepared by the gel-spinning method 4 / BiFeO 3 heterojunction films. The conditions for throwing glue are: 1) Ultra-thin BiFeO 3 Layer preparation: Spin the glue at 500 rpm for 10 seconds and then at 3000 rpm for 30 seconds. After spinning the glue, dry the substrate with the precursor wet film on a hot plate at 350°C for 1 to 3 minutes, and finally dry it in O 2 Ultrathin BiFeO was prepared by sintering at 550 °C for 5 minutes in a rapid annealing furnace under atmosphere 3 layer; 2) BiVO 4 Layer: Spin the glue at 500rpm for 10 se...

Embodiment 2

[0032] First Bi(NO 3 ) 3 ·5H 2 O and Fe(NO 3 ) 3 9H 2 O (molar ratio according to Bi:Fe=1:1) configure BiFeO with DMF as solvent 3 Precursor solution, the concentration of the precursor solution is 0.2mL / cm 2 . Bi(NO 3 ) 3 ·5H 2 O and NH 3 VO 3 (Molar ratio according to Bi:V=1:1) proportionally and completely dissolved in DMF with the assistance of citric acid, acetic acid and ethanolamine, BiVO 4 precursor solution. BiVO was then prepared by the gel-spinning method 4 / BiFeO 3 heterojunction films. The conditions for throwing glue are: 1) Ultra-thin BiFeO 3 Layer preparation: Spin the glue at 500 rpm for 10 seconds and then at 3000 rpm for 30 seconds. After spinning the glue, dry the substrate with the precursor wet film on a hot plate at 350°C for 1 to 3 minutes, and finally dry it in O 2 The ultra-thin BFO layer was prepared by sintering in a rapid annealing furnace at 600°C for 5 minutes under atmosphere; 2) BiVO 4 Layer: Spin the glue at 500rpm for 10 se...

Embodiment 3

[0035] First Bi(NO 3 ) 3 ·5H 2 O and Fe(NO 3 ) 3 9H 2 O (molar ratio according to Bi:Fe=1:1) configure BiFeO with DMF as solvent 3 Precursor solution, the concentration of the precursor solution is 0.2mL / cm 2 . Bi(NO 3 ) 3 ·5H 2 O and NH 3 VO 3 (Molar ratio according to Bi:V=1:1) proportionally and completely dissolved in DMF with the assistance of citric acid, acetic acid and ethanolamine, BiVO 4 precursor solution. BiVO was then prepared by the gel-spinning method 4 / BiFeO 3 heterojunction films. The conditions for throwing glue are: 1) Ultra-thin BiFeO 3 Layer preparation: Spin the glue at 500 rpm for 10 seconds and then at 3000 rpm for 30 seconds. After spinning the glue, dry the substrate with the precursor wet film on a hot plate at 350°C for 1 to 3 minutes, and finally dry it in O 2 The ultra-thin BFO layer was prepared by sintering in a rapid annealing furnace at 550°C for 5 minutes under atmosphere; 2) BiVO 4 Layer: Spin the glue at 500rpm for 10 se...

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Abstract

The invention relates to a method for preparing bismuth vanadate / bismuth ferrite heterojunction film solar cells on a glass substrate. The method comprises the following steps: selecting FTO (Fluorinedoped Tin Oxide) conductive glass as a base, preparing a perovskite-structure bismuth vanadate / bismuth ferrite heterojunction film with a chemical solution deposition method, and then preparing a top electrode on the film with a physical sputtering method to obtain the solar cells. The photovoltaic effect of the bismuth vanadate film can be increased and is reversed by utilizing an ultra-thin bismuth ferrite layer. The method can prepare the bismuth vanadate / bismuth ferrite heterojunction film with high consistency and good repeatability on the glass substrate with a low cost. The prepared heterojunction film has good photovoltaic properties, the diode direction of the heterojunction film is opposite to the diode direction of a pure bismuth vanadate film, and ultra-thin bismuth ferrite ferroelectric films and similar bismuth vanadate / bismuth ferrite heterojunction films have a wide application prospect in the fields of solar cells and photoelectric devices due to the good properties.

Description

technical field [0001] The invention belongs to the technical field of film deposition and solar cell preparation, and in particular relates to a method of implanting an ultra-thin bismuth ferrite layer between a bismuth vanadate film and an electrode to prepare bismuth vanadate / bismuth ferrite heterojunction thin film solar energy battery method. Background technique [0002] In the past few years, great breakthroughs have been made in the research of ferroelectric thin films in the field of thin film solar cell thin films. New technologies and methods are continuously applied to improve the photovoltaic effect of ferroelectric thin films, including the use of ground-band nano-metal oxide particles or thin films to improve the efficiency of solar cells. In addition, ferroelectric thin films are gaining more and more attention for their applications in solar cells due to their spontaneous polarization and polarization-controllable properties. At present, researchers have u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20
CPCY02P70/521Y02P70/50
Inventor 郭益平董文刘河洲李华陶文燕康红梅
Owner SHANGHAI JIAO TONG UNIV
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