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Amorphous silicon germanium thin-film solar battery

A technology of thin-film solar cells and amorphous silicon germanium, which can be used in circuits, photovoltaic power generation, electrical components, etc., and can solve problems such as interface mismatch

Inactive Publication Date: 2013-05-01
SHANGHAI INST OF SPACE POWER SOURCES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problems such as the interface mismatch between the intrinsic absorption layer and the P-type doped layer in the amorphous silicon germanium thin film battery of the prior art, the object of the present invention is to provide an amorphous silicon germanium thin film solar cell

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Embodiment Construction

[0012] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

[0013] figure 1 It is the structural schematic diagram of the amorphous silicon germanium thin film solar cell whose substrate is stainless steel or polyimide according to the present invention, such as figure 1 As shown in the embodiment, the device includes:

[0014] On the substrate 11 are sequentially deposited a back electrode 12, an N-type amorphous silicon doped layer 13, an amorphous silicon germanium battery intrinsic absorption layer 14, a narrow band gap lightly doped amorphous silicon P layer 15, and an amorphous silicon wide band gap P Type doped layer 16 and front electrode 17 .

[0015] figure 2 It is a schematic diagram of the structure of the amorphous silicon germanium thin film solar cell whose substrate is transparent glass according to the present invention, such as figure 2 As shown in the embodiment, the device includes: ...

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Abstract

The invention relates to a photovoltaic solar battery, and discloses an amorphous silicon germanium thin-film solar battery. The amorphous silicon germanium thin-film solar battery comprises a back electrode 12, an N type amorphous silicon doping layer 13, an amorphous silicon germanium battery intrinsic absorption layer 14, a broad-band-gap amorphous silicon P type doping layer 16 and a front electrode 17 which are sequentially deposited on a flexible substrate 11; and according to the amorphous silicon germanium thin-film solar battery, a narrow-band-gap light dope amorphous silicon P layer 15 is arranged between the amorphous silicon germanium battery intrinsic absorption layer 14 and the broad-band-gap amorphous silicon P type doping layer 16 as a buffer layer. With the amorphous silicon germanium thin-film solar battery, the problem of mismatching the energy band between the intrinsic absorption layer and the broad-band-gap P layer with the interface can be effectively improved, the output and collection of current carriers can be facilitated, and further the filling factor and conversion efficiency of the battery can be improved.

Description

technical field [0001] The present invention relates to photovoltaic solar cells, in particular to an amorphous silicon germanium thin film solar cell. Background technique [0002] Among various thin-film batteries, amorphous silicon (a-Si:H) thin-film solar cells are the earliest and most researched thin-film solar cells. Due to the wide band gap of the amorphous silicon film material itself, the insufficient absorption of long-wavelength light in the solar spectrum limits the further improvement of cell efficiency. In order to solve this problem, research work on amorphous silicon germanium (a-SiGe:H) thin-film batteries has been widely carried out in recent years, making flexible substrate silicon-based photovoltaic materials composed of amorphous silicon, amorphous silicon germanium and other photovoltaic thin film materials. Tandem thin-film solar cells can be widely used in photovoltaic power generation and space vehicle power supply and other fields. [0003] In th...

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0376H01L31/06
CPCY02E10/50
Inventor 杨君坤刘成徐正军
Owner SHANGHAI INST OF SPACE POWER SOURCES
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