High-melting-point material droplet target generating device for extreme ultraviolet light source

Abstract

The invention discloses a high-melting-point material droplet target generating device for an extreme ultraviolet light source. The generating device comprises laser, a lens, a particle feeding device, a nozzle and a pipeline, the laser and the nozzle are coaxial, the laser enters the nozzle through the lens in a focusing manner and is used for heating target solid particles entering the nozzle, and the particle feeding device is connected with the nozzle through the pipeline and is used for continuously and uniformly delivering the target solid particles into the nozzle. The target solid particles are heated by the laser and melted into liquid when entering the nozzle, and the liquid is ejected by the nozzle to form uniform droplet targets. The droplet targets generated by the generating device are uniform and stable, the sizes of the droplet targets can be controlled, a method is simple and reliable, a layer of rarefied gas wraps the peripheries of the targets when the targets are ejected, neutral or dotted particle fragments formed after action of the laser and the droplet targets can be suppressed from splashing everywhere by the layer of rarefied gas.

Description

technical field [0001] The invention belongs to the field of EUV (Extreme Ultraviolet, extreme ultraviolet) light source, and more specifically relates to a high-melting-point material droplet target generation device for extreme ultraviolet light source. Background technique [0002] In recent years, with the rapid development of the semiconductor manufacturing industry, integrated circuits are increasingly pursuing smaller etching sizes and intervals to create larger-scale integrated circuits. However, the current lithography technology has reached the limit of the etching resolution of the lithography machine. EUVL (Extreme Ultraviolet Lithography, extreme ultraviolet lithography) technology uses extreme ultraviolet light as the light source of the lithography machine for etching. Due to the use of shorter wavelength light sources, EUVL technology greatly improves the resolution of etching. ITRS (International Technology Roadmap for Semiconductors) has listed EUVL as th...

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Problems solved by technology

[0006] Aiming at the defects of the prior art, the object of the present invention is to provide a high-melting-point material droplet target generation device for extreme ultraviolet light source, aiming to solve the problem that the existing heating injection device is difficult to repressurize injection at such a high temperature and persistent work problem

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