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Silicon On Insulator (SOI) Reduced Surface Field (RESURF) superjunction device structure and production method thereof

A technology for superjunction devices and drift regions, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of uneven electric field distribution in the drift region, achieve reduced sensitivity, high withstand voltage, and improve device reliability Effect

Active Publication Date: 2015-07-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a SOIRESURF superjunction device structure and its preparation method, which is used to solve the problem of uneven electric field distribution in the drift region in the prior art

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  • Silicon On Insulator (SOI) Reduced Surface Field (RESURF) superjunction device structure and production method thereof
  • Silicon On Insulator (SOI) Reduced Surface Field (RESURF) superjunction device structure and production method thereof
  • Silicon On Insulator (SOI) Reduced Surface Field (RESURF) superjunction device structure and production method thereof

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Embodiment Construction

[0037] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0038] see Figure 1a to Figure 7 shown. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be chang...

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Abstract

The invention provides a Silicon On Insulator (SOI) Reduced Surface Field (RESURF) superjunction device structure and a production method thereof. An SOI substrate is provided, a drift region, a source end and a drain end are formed on top silicon of the substrate, a first mask with a plurality of windows is provided, widths of first windows are increased sequentially from the source end to the drain end, the left of the vertical projection of the mask on the drift region and the left of the drift region are in a certain distance, the N type ion injection is conducted from first windows, the annealing is conducted, a second mask on which a plurality of second windows are arranged transversely, the P type ion injection is conducted to the N type drift region from second windows, P posts and N posts are formed at intervals, and P posts are not connected to the drain end. By the aid of the high concentration of the superjunction region, the device has low on-state resistance, the RESURF region can guarantee that the device has high withstanding voltage, the trade-off relation between the device withstanding voltage and the on-state resistance can be improved, the sensitivity of the device withstanding voltage for unbalanced loads is reduced an the reliability of the device is improved.

Description

technical field [0001] The invention introduces a lateral SOIRESURF superjunction device structure, which belongs to the technical field of microelectronics and solid electronics. Background technique [0002] Power integrated circuits are sometimes called high-voltage integrated circuits, which are an important branch of modern electronics. They can provide new circuits with high speed, high integration, low power consumption and radiation resistance for various power conversion and energy processing devices, and are widely used in electric power Daily consumption fields such as control systems, automotive electronics, display device drivers, communications and lighting, as well as many important fields such as national defense and aerospace. The rapid expansion of its application scope has also put forward higher requirements for the high-voltage devices in its core part. [0003] For the power device MOSFET, under the premise of ensuring the breakdown voltage, the on-res...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/266H01L29/78H01L29/06
Inventor 程新红夏超王中健曹铎郑理贾婷婷俞跃辉
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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