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Titanium-antimony-tellurium phase-changing material depositing method and preparation method of phase-changing storage unit

A technology of phase-change materials and deposition methods, which is applied in the preparation of phase-change memory cells and the deposition of titanium-antimony-tellurium phase-change materials, which can solve problems such as weak data retention, low crystallization temperature, and high power consumption of devices

Active Publication Date: 2013-03-27
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The most commonly studied phase change material is Ge 2 Sb 2 Te 5 (GST), but its crystallization temperature is low, the power consumption of the device is large, and the data retention is not strong. The development of new phase change materials has always been an important task for material researchers.
[0006] TiSbTe is a new type of phase change material, which has the characteristics of fast phase change speed, good data retention and high crystallization temperature. It is a phase change material with independent intellectual property rights in my country. However, there is no chemical preparation method for this material at home and abroad. reports and related patents

Method used

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  • Titanium-antimony-tellurium phase-changing material depositing method and preparation method of phase-changing storage unit
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  • Titanium-antimony-tellurium phase-changing material depositing method and preparation method of phase-changing storage unit

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Embodiment 1

[0053] Such as Figure 1a~Figure 3b As shown, this embodiment provides a titanium-antimony-tellurium phase change material deposition method, at least including the following steps:

[0054] First, a substrate is provided, the substrate is cleaned to remove surface impurities, the substrate is placed in a deposition chamber, and heated to 60-350°C; then the following steps are performed:

[0055] a) Deposition of Ti precursors including (R 1 ) 4 Ti, (R 1 R 2 N) 4 Ti, (R 1 O) 4 Ti, ((R 1 ) 3 Si) 4 Ti and TiM 4 One or more of, where R 1 and R 2 It is a linear, branched or cyclic alkyl group containing 1 to 10 carbons, and M is Cl, F or Br;

[0056] b) Deposition of Te precursors comprising (R 1 ) 2 Te, (R 1 R 2 N) 2 Te, ((R 1 ) 3 Si) 2 One or more than one of Te, wherein R is selected from linear, branched or cyclic alkyl or alkenyl groups containing 1 to 10 carbons;

[0057] c) deposition of Sb precursors, the Sb precursors include (R 1 ) 3 Sb, (R 1 R ...

Embodiment 2

[0064] This embodiment provides a titanium-antimony-tellurium phase-change material deposition method, at least including the following steps: put the substrate into the deposition chamber, first perform a), the Ti precursor Ti(OCH 3 ) 4 Pass through and deposit on the surface of the substrate, and clean the remaining precursor; then proceed to c), pass through the Te precursor ((CH 3 ) 3 Si) 2 Te, and clean the remaining precursors and reaction products, at this time to form TiTe 2 , followed by b), the Sb precursor Sb(OC 2 h 5 ) 3 , and clean the remaining precursor, and then proceed to c) again, passing Te precursor ((CH 3 ) 3 Si) 2 Te, cleaning the remaining precursors and reaction products, at this time a layer of Sb is formed 2 Te 3 , according to the deposition sequence a)-c)-b)-c) cycles to finally form the titanium-antimony-tellurium phase change material layer. The composition of the titanium-antimony-tellurium phase change material layer can be controlled...

Embodiment 3

[0066] This embodiment provides a titanium-antimony-tellurium phase-change material deposition method, at least including the following steps: put the substrate into the deposition chamber, first perform b), and introduce the Sb precursor Sb(C 3 h 7 ) 3, and clean the remaining precursor, and pass in hydrogen plasma for a certain period of time (such as 2s); then proceed to c), and pass in Te precursor Te(C 3 h 7 ) 2 , and clean the remaining precursor, and pass through hydrogen plasma for a certain period of time (such as 2s); then proceed to a), the Ti precursor Ti(C 4 h 9 ) 4 Pass through the deposition on the surface of the substrate, and clean the remaining precursor, pass through the hydrogen plasma for a certain period of time (such as 2s); then perform a) again, the Ti precursor Ti(C 4 h 9 ) 4 Pass through the deposition on the surface of the substrate, and clean the remaining precursor, pass through the hydrogen plasma for a certain period of time (such as 2s)...

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Abstract

The invention provides a titanium-antimony-tellurium phase-changing material depositing method and a preparation method of a phase-changing storage unit. The titanium-antimony-tellurium phase-changing material depositing method includes: depositing a Ti precursor which comprises one or more than one of (R1)4Ti, (R1R2N)4Ti, (R1O)4Ti, ((R1)3Si)4Ti and TiM4, wherein R1 and R2 are linear chains, branched chains or annular alkyls containing 1-10 carbons, and M is Cl, F or Br; depositing a Te precursor which comprises one or more than one of (R1)2Te, (R1R2N)2Te and ((R1)3Si)2Te, wherein R is selected from a linear chain, a branched chain or an annular alkyl or alkenyl containing 1-10 carbons; and depositing Sb precursors which comprise one or more than one of (R1)3Sb, (R1R2N)3Sb, (R1O)3Sb, ((R1)3Si)3Sb and SbM3, wherein R1 and R2 are linear chains, branched chains or annular alkyls containing 1-10 carbons, and M is Cl, F or Br. The TiSbTe phase-changing materials prepared by the titanium-antimony-tellurium phase-changing material depositing method have the advantages of being accurate and controllable in thickness, good in thin film compactness and strong in pore filling capability. Phase-changing thin films prepared by the titanium-antimony-tellurium phase-changing material depositing method can be applied to a storer, so that high-density storing can be achieved, and simultaneously low-energy-consumption devices can be obtained.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a deposition method of a titanium-antimony-tellurium phase-change material and a preparation method of a phase-change storage unit. Background technique [0002] Phase change memory (PCM) is an emerging semiconductor memory. Compared with various semiconductor storage technologies currently available, it includes conventional volatile technologies, such as static random access memory (SRAM), dynamic random access memory (DRAM), etc. , and non-volatile technologies, such as dielectric random access memory (FeRAM), electrically erasable programmable read-only memory (EEPROM), flash memory (FLASH), etc., have non-volatile, long cycle life (>10 13 time), small component size, low power consumption, multi-level storage, high-speed reading, anti-radiation, high and low temperature resistance (-55~125°C), anti-vibration, anti-electronic interference and simple ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 宋三年宋志棠张中华顾怡峰
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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