Substrate processing composition

Abstract

The invention relates to a substrate processing composition, which is composed of the following components in parts by weight: 15-20 parts of sodium dihydrogen phosphate, 10-15 parts of ethyl glycine, 5-10 parts of sodium tripolyphosphate, 11-14 parts of a glucoheptonic acid, 7-12 parts of vinylated oxygen / ethylene glycol condensation products, 8-16 parts of benzyl chloride, 17-20 parts of potassium hydroxide, 25-30 parts of propylene oxide / propylene glycol condensation products, 27-38 parts of a tartaric acid, 14-18 parts of alkali or alkaline-earth metal borates, 16-19 parts of carbonate, 21-28 parts of hydroxide, 14-17 parts of phosphate, and 20-25 parts of tetramethylammonium hydroxide. The substrate processing composition disclosed by the invention can effectively remove metals adsorbed on substrates through cleaning, therefore, the subsequent acidic cleaning can be omitted, so that the cleaning process is significantly shortened.

Description

technical field [0001] The present invention relates to a substrate treatment composition removed by cleaning. Background technique [0002] In the manufacturing process of a silicon wafer for semiconductor manufacturing, when the wafer is cut from a silicon single crystal ingot and processed to a predetermined thickness, etching is performed with an alkali such as sodium hydroxide or potassium hydroxide in order to achieve uniform etching. At this time, a large amount of metal impurities in sodium hydroxide or potassium hydroxide is adsorbed on the wafer surface. Usually, after etching, it is removed by cleaning with an acid such as dilute hydrofluoric acid, but especially in a low-resistance substrate such as boron dispersed in a high concentration, Cu and Ni are easily diffused inside, and Ni in sodium hydroxide or hydroxide Potassium is used at a temperature of about 80° C. to cause diffusion, so surface cleaning with acid cannot remove metal impurities diffused inside,...

AI Technical Summary

Problems solved by technology

Usually after etching, it is removed by cleaning with an acid such as dilute hydrofluoric acid, but especially in low-resistance substrates with a high concentration of boron and the like, Cu and Ni are easy to diffuse inside, and Ni in sodium hydroxide or hydroxide Potassium is used at a temperature of around 80°C to cause diffusion, so surface cleaning with acid cannot remove internally diffused metal impurities, which has become a problem