Crystal growth method of polycrystalline silicon ingot

A technology for crystal growth and polycrystalline silicon ingots, applied in the directions of crystal growth, polycrystalline material growth, single crystal growth, etc., can solve the problems of large changes in the growth rate of polycrystalline silicon ingots, affecting the efficiency of solar cells, and degrading the quality of polycrystalline silicon ingots. The effect of improving overall quality, reducing defect density, and increasing overall proportion

Active Publication Date: 2013-03-20
YINGLI GRP
View PDF3 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a crystal growth method for polycrystalline silicon ingots to solve the problem that the growth rate of polycrystalline silicon ingots varies greatly during the growth stage, resulting in an increase in defect density in the crystal, an overall decline in the quality of polycrystalline silicon ingots, and affecting the overall solar cell produced by it. technical issues of efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystal growth method of polycrystalline silicon ingot
  • Crystal growth method of polycrystalline silicon ingot
  • Crystal growth method of polycrystalline silicon ingot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The polycrystalline ingot furnace is used to produce polycrystalline silicon ingots by the method of directional solidification growth, including: heating stage, melting stage, growth stage, annealing stage and cooling stage. The process formula of the growth stage is shown in Table 1, wherein, at the end of the G6 stage, the top is completed; at the end of the G7 stage, the long horn is completed.

[0027] Table 1

[0028]

Embodiment 2

[0030] The polycrystalline ingot furnace is used to produce polycrystalline silicon ingots by the method of directional solidification growth, including: heating stage, melting stage, growth stage, annealing stage and cooling stage. The process formula of the growth stage is shown in Table 2, wherein, at the end of the G6 stage, the top is completed; at the end of the G7 stage, the long horn is completed.

[0031] Table 2

[0032]

Embodiment 3

[0034] The polycrystalline ingot furnace is used to produce polycrystalline silicon ingots by the method of directional solidification growth, including: heating stage, melting stage, growth stage, annealing stage and cooling stage. The process formula of the growth stage is shown in Table 3, wherein, at the end of the G6 stage, the top is completed; at the end of the G7 stage, the long horn is completed.

[0035] table 3

[0036]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a crystal growth method of a polycrystalline silicon ingot, which comprises a heating stage, a melting stage, a growth stage, an annealing stage and a cooling stage; in the growth stage, from the beginning of the growth starts to the end of the top through, the temperature of a center region of the top of the polycrystalline silicon ingot is maintained at a constant value. According to the crystal growth method, the temperature gradient of the polycrystalline silicon ingot in the vertical direction in a growth process can be reduced, and thus the growth speed of the polycrystalline silicon ingot is more stable, impurities inside the polycrystalline silicon ingot are more uniformly segregated towards a liquid phase, the defect density inside a crystal of the polycrystalline silicon ingot can be effectively reduced, and the integral quality of the polycrystalline silicon ingot is improved, therefore, the battery efficiency of a single battery cell manufactured by adopting the polycrystalline silicon ingot and the integral proportion of the high-efficiency battery cell are increased.

Description

technical field [0001] The invention relates to the field of photovoltaic cells, in particular to a crystal growth method for polycrystalline silicon ingots. Background technique [0002] As a clean and environmentally friendly new energy source, the application of solar cells is becoming more and more popular. The traditional silicon cell technology has low power generation per unit area and low cell efficiency. Since most solar cells are installed on the ground, this greatly increases the area occupied by solar panels. Therefore, the improvement of the cell efficiency of the solar cell is conducive to greatly reducing the land cost. [0003] Polycrystalline silicon ingots, which are used to make cells for solar cells, are typically produced using polycrystalline ingot furnaces. The production process of polycrystalline ingot furnace includes five stages: heating (H), melting (M), growth (G), annealing (A) and cooling (C). Among them, the purpose of the heating stage is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B11/00C30B28/06C30B29/06
Inventor 张任远刘磊高文宽潘明翠吴萌萌
Owner YINGLI GRP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap