Residual life predication method and device for electromigration failure

Abstract

The invention provides a residual life predication method and device for the electromigration failure. The residual life predication method comprises the following steps of: building an electromigration life model of an MOS (metal oxide semiconductor) device; according to the current density and the first environment temperature as well as the electromigration life model under the preset normal working condition, obtaining the life T1 of normal electromigration failure; according to a target prognostic point T2, a second environment temperature and the electromigration life model, obtaining current density stress; inputting the current density stress into an MOS device electromigration failure early warning circuit based on a prognostic cell; if the MOS device electromigration failure early warning circuit based on the prognostic cell processes the current density stress for time T3, outputting a high electrical level; and according to T1, T2 and T3, obtaining the residual life of the electromigration failure corresponding to T2. The invention also provides a residual life predication device for the electromigration failure, which has the characteristics that the reliability on predicting the residual life of the electromigration failure of the MOS device can be improved, the prediction efficiency is improved, and the cost is lowered.

Description

technical field [0001] The invention relates to the field of life prediction of MOS devices, in particular to a method and device for prediction of remaining life of electromigration failure. Background technique [0002] With the rapid development of modern electronic technology, the size of metal oxide semiconductor (Metal Oxide Semiconductor, MOS) devices has entered the nanometer level, and its metal interconnection occupies an increasing area in the entire integrated circuit chip. The electromigration failure problem of metal interconnection has become a bottleneck restricting the development of large-scale integrated circuit technology. The electromigration phenomenon is a material transport phenomenon caused by the metal atoms in the metal interconnection line being affected by moving electrons. It appears as a cavity or a hillock, which leads to a linear increase in the resistance value and fails, which seriously affects the life of the integrated circuit. The facto...

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Problems solved by technology

[0004] However, for the first approach, the reliability life of MOS devices is calculated based on the reliability life test data under simple stress conditions. The reliability test does not involve the actual working state and working environment of the product, but in actual use, MOS devices are in a complex working environment under the combined effects of multiple stresses, so the traditional life expectancy is often far from the actual, and the reliability is not high; moreover, the reliability prediction of this MOS device is expensive and requires regular testing. long period;

[0005] For the second approach, failure analysis of failed devices is a post-mortem diagnosis technique, which is not the best method from an economical or technical point of view for devices whose failure modes and failure mechanisms have been clearly defined

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