Low-noise amplifier and manufacturing method for same

A technology of a low noise amplifier and a manufacturing method, which are applied in the direction of improving the amplifier to reduce the influence of noise, etc., can solve the problems of increasing the system cost and increasing the power consumption of the system, and achieve the effects of performance improvement, high quality factor, and high performance quality factor.

Active Publication Date: 2013-02-27
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, the method of increasing system complexity and adding off-chip components is usually used to reduce the noise figure, but there are defects of increasing system power consumption and system cost

Method used

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  • Low-noise amplifier and manufacturing method for same
  • Low-noise amplifier and manufacturing method for same
  • Low-noise amplifier and manufacturing method for same

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Embodiment Construction

[0028] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention. In addition, the present invention is described in detail by means of schematic diagrams. When describing the embodiments of the present invention in detail, for convenience of explanation, the schematic diagrams are not partially enlarged according to the general scale, which should not be taken as a limitation of the present invention.

[0029] First please refer to figure 1 and figure 2 , which is a structural diagram of a low noise amplifier according to an embodiment of the present invention. The inductor is formed on the substrate 200 and its location is the...

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Abstract

The invention discloses a low-noise amplifier and a manufacturing method for the same. The low-noise amplifier comprises an inductor and other devices, wherein the inductor and the other devices are formed in an inductor area and other device areas on a substrate; the inductor area is partitioned by the other device areas; a high-resistance substrate isolation area is formed below the inductor area; an annular n-trap grounding protection layer is arranged around the inductor area; and the n-trap grounding protection layer surrounds the other devices areas. According to the low-noise amplifier and the method disclosed by the invention, the problem of noise interference between a low-noise amplifier module and another module can be solved, and a noise coefficient can be further effectively reduced so as to improve the performance of the low-noise amplifier.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a low-noise amplifier and a manufacturing method thereof. Background technique [0002] An important feature of wireless sensor network chips is miniaturization and integration. With the continuous deepening of research on wireless sensor network chips, people have begun to be satisfied not only with the realization of functions, but with the cost, integration, and functional aspects of chips. More and more urgent demands have been made. The single-chip system integrated chip solution brought by the system chip can not only significantly increase the integration level, reduce the chip volume, and increase the packaging density, but also can effectively reduce the cost and cost of the chip system. Therefore, in the chip design of the current wireless sensor network, people have increasingly relied on the concept of system integration to design related circuits and develop a new...

Claims

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Application Information

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IPC IPC(8): H03F1/26
Inventor 李琛
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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