Gas filling device and plasma processing equipment

Abstract

The invention provides a gas filling device and plasma processing equipment. The gas filling device comprises a nozzle and a cover plate, wherein the nozzle is provided with a first passage and a nozzle bypass communicated with the first passage; the cover plate is provided with a groove and a plurality of second passages; the groove is basically positioned at the center position of the cover plate; the second passages are uniformly distributed in the cover plate around the central line of the groove; the nozzle is embedded in the groove; an air outlet end of the first passage extends out of the cover plate from the bottom of the groove; air inlet ends of the second passages are communicated with the nozzle bypass; and the second passages are formed into a multi-layer structure. Uniform air flow distribution can be obtained on the whole surface of a processed wafer by the gas filling device and the plasma processing equipment, so that the phenomenon of etching or uneven deposition caused by uneven air distribution from the upside center of the surface of the wafer to the edge can be effectively avoided, and the etching or deposition rates of each point on the surface of the whole wafer are more approximate.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to a gas input device and plasma processing equipment. Background technique [0002] In the manufacturing process of integrated circuits and solar cells, it is usually necessary to use plasma processing equipment to perform thin film deposition, etching and other processing processes on semiconductor wafers such as single crystal silicon. In the plasma processing equipment, the gas input device usually provides the required process gas for the processing of the semiconductor wafer, and can also provide the required auxiliary gas under certain circumstances or during equipment maintenance. [0003] Currently, plasma processing equipment is widely used in the manufacturing process of integrated circuits or MEMS devices. For example, inductively coupled plasma devices are usually used in dry etching (Dry Etching) or chemical vapor deposition (CVD) processes. The principle is...

AI Technical Summary

Problems solved by technology

[0005] The above-mentioned inductively coupled plasma device adopts the method of air intake in the upper center of the reaction chamber 3. Although the nozzle 2 can be provided with multiple air inlets, the problem is that the nozzle 2 is fixedly installed in the center of the quartz cover plate, and the process gas enters the reaction chamber. After the chamber 3, the difference in the length of the gas flow path from the center of the wafer 7 to the edge will cause the gas flow field on the surface of the wafer 7 to form a gradient distribution from the center to the edge, so that the concentration of the process gas is higher at the center of the wafer 7 and lower at the edge , the air flow distribution above the surface of the entire wafer 7 is uneven, which affects the processing quality of the semiconductor wafer 3

[0006] Since the plasma participating in the reaction is formed by the ionization of the process gas, the above-mentioned non-uniform gas flow distribution will lead to great differences in the rate and uniformity of etching or deposition on the entire wafer surface, thus affecting the quality of wafer processing Rate

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