Giant magneto-impedance effect biosensor preparation method for serum tumor marker detection
A tumor marker and biosensor technology, applied in the field of giant magneto-impedance effect biosensor fabrication, can solve the problems of not realizing cell sample labeling and typing detection, low sensitivity of individual indicators, lack of flexibility, etc., to achieve real-time analysis , no storage requirements, the effect of high detection sensitivity
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Embodiment 1
[0050] The whole preparation process is divided into the following steps:
[0051] (1) The giant magneto-impedance effect sensor (referred to as GMI sensor) is composed of NiFe / Cu / NiFe multilayer film on a glass substrate. The shape is a zigzag structure with 3 turns and a distance of 60um between turns. The width of the Cu film is smaller than that of the NiFe film. The NiFe film has a width of 160 um and a thickness of 6 um, and the Cu film has a width of 140 um and a thickness of 6 um. The GMI sensor is produced by MEMS technology, and the specific production can be realized by using the existing technology, such as the method described in the patent No. ZL200510026607.8, which will not be repeated here.
[0052] (2) An insulating layer of Al2O3 is made by sputtering on the GMI sensor with a thickness of 0.5um. Throw away the photoresist, dry, expose, develop, etch Al2O3, and remove the glue, so that the sensor pins are exposed to the outside.
[0053] (3) A Cr / Au thin fi...
Embodiment 2
[0071] (1) The giant magneto-impedance effect sensor of the present invention is composed of a NiFe / Cu / NiFe multilayer film on a glass substrate, and its shape is a zigzag structure with 5 turns and a distance between turns of 60um. The width of the Cu film is smaller than that of the NiFe film, the NiFe film has a width of 140um and a thickness of 4um, and the Cu film has a width of 120um and a thickness of 4um. The GMI sensor is manufactured by MEMS technology. The detailed description of the manufacture can refer to the patent that has been applied for. The patent number is 200510026607.8, and will not be repeated here.
[0072] (2) Sputtering is used to make an insulating layer of aluminum oxide on the GMI sensor, and its thickness is 0.7um. Throw away the photoresist, dry, expose, develop, etch Al2O3, and remove the glue, so that the sensor pins are exposed to the outside.
[0073] (3) A Cr / Au thin film is sputtered to a thickness of 500 nm. Throw photoresist, dry, expo...
Embodiment 3
[0091] (1) The giant magneto-impedance effect sensor of the present invention is composed of a NiFe / Cu / NiFe multilayer film on a glass substrate, and its shape is a zigzag structure with 10 turns and a distance between turns of 60um. The width of the Cu film is smaller than that of the NiFe film, the NiFe film has a width of 120um and a thickness of 2um, and the Cu film has a width of 100um and a thickness of 2um. The GMI sensor is manufactured by MEMS technology. The detailed description of the manufacture can refer to the patent that has been applied for. The patent number is 200510026607.8, and will not be repeated here.
[0092] (2) Sputtering is used to make an insulating layer of aluminum oxide on the GMI sensor, and its thickness is 1um. Throw away the photoresist, dry, expose, develop, etch Al2O3, and remove the glue, so that the sensor pins are exposed to the outside.
[0093] (3) A Cr / Au thin film is sputtered to a thickness of 100 nm. Throw photoresist, dry, expos...
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