Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The invention provides a semiconductor device, which comprises a semiconductor substrate of a first semiconductor material and a grid structure positioned on the semiconductor substrate, wherein a crystal lattice dislocation line generating channel stress exists in a channel region at the lower part of the grid structure and forms a certain included angle with a channel.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique [0002] Theoretical and empirical studies have confirmed that when stress is applied to the channel of a transistor, the semiconductor lattice in the channel region is strained, and the carrier mobility of the transistor can be increased or decreased; however, it is also known that the electron and space Caves respond differently to the same type of strain. For example, compressive stress is applied in the longitudinal direction of current flow to cause compressive strain in the channel region, which is beneficial to improve hole mobility, but correspondingly reduces electron mobility. Applying tensile stress in the longitudinal direction leads to tensile strain of the channel region lattice, which is beneficial to improve electron mobility, but correspondingly reduces hole mobility. With ...

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Problems solved by technology

For example, applying compressive stress in the longitudinal direction of current flow will cause compressive strain in the lattice of the channel region, which is beneficial to improve hole mobility, but correspondingly reduces electron mobility.

Applying tensile stress in the longitudinal direction leads to tensile strain of the channel region lattice, which is beneficial to improve electron mobility, but correspondingly reduces hole mobility.

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