Epitaxy defect analyzing structure and manufacturing method thereof as well as epitaxy defect analyzing method

Abstract

The invention provides an epitaxy defect analyzing structure, comprising a semiconductor substrate and an epitaxy layer, wherein an epitaxy growing region is formed on the surface of one part of the semiconductor substrate and the surface of the other part of the semiconductor substrate protected by a baffling layer protection region is exposed; and the epitaxy layer is formed on the epitaxy growing region. The invention further provides a manufacturing method of the epitaxy defect analyzing structure. The invention further provides an epitaxy defect analyzing method, comprising the following steps of: carrying out defect correlation analysis comparison on the semiconductor substrate protected by the baffling layer protection region in the epitaxy defect analyzing structure and the epitaxy layer formed in the epitaxy growing region; and judging whether an epitaxy defect in the epitaxy layer comes from an epitaxy process, an epitaxy front semiconductor substrate manufacturing process or the semiconductor substrate, so as to avoid the problem that selected samples in material selecting and epitaxy machining process are completely different due to the fact that the semiconductor substrate without epitaxy and the semiconductor substrate which is not extended are not the same semiconductor substrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing technology, and in particular relates to an epitaxial defect analysis structure, a manufacturing method of the epitaxial defect analysis structure and an analysis method of epitaxial defect by using the epitaxial defect analysis structure. Background technique [0002] The epitaxial process in the manufacture of integrated circuits is to grow the conductivity type, resistivity, thickness, The process of a new single crystal layer whose parameters such as lattice structure and integrity meet the product structure requirements is called an epitaxial layer. [0003] During the epitaxial deposition process, affected by the substrate and the epitaxial process, epitaxial defects (Epitaxy Defect) will appear in the epitaxial layer. The position of epitaxial defects in epitaxy can be divided into two categories: one is epitaxial defects on the surface, which can generally be observed ...

AI Technical Summary

Problems solved by technology

[0005] In the traditional epitaxial defect analysis method, the epitaxial layer 11, the epitaxial layer 11, Substrate 10, defect type, quantity, density, shape, size, distance and other data in the transition zone from substrate to epitaxy, as well as on-site process data such as epitaxy temperature, gas flow rate, growth rate, cavity pressure, and furnace integrity However, the process of this method is complicated, and it is usually necessary to find relevant non-epitaxy substrates for simulation experiments. When a substrate problem is suspected, it is necessary to do enough experiments to provide more accurate results. More data, resulting in waste of materials, production capacity, and manpower. Since the substrate 10 formed with an epitaxial layer 11 and the non-epitaxy substrate used for defect analysis and comparison are likely to be incompletely consistent in material selection and epitaxial processing, Especially for production and processing enterprises with limited epitaxial process capabilities and large process fluctuations, the abnormal repeatability cannot be guaranteed to be reproduced again, so there are many variables in the investigation and analysis of epitaxial defects.

[0006] Therefore, the present invention needs to provide an epitaxial structure, which can avoid the problem of incomplete consistency between the substrate formed with epitaxy and the substrate without epitaxy used to find relevant data in the process of material selection and epitaxy processing

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