Method for testing proton/single event effect resisting capacity of device

Abstract

The invention provides a method for testing the proton / single event effect resisting capacity of a device. The method comprises the following steps of: 1, providing the device to be tested; 2, performing proton-induced single event upset (SEU) detection to acquire the upset condition of a device position; 3, performing proton-induced signal event latchup (SEL) detection to acquire current and power consumption of the device; and 4, processing and analyzing the test data according to the upset data and the current and the power consumption of the device to acquire the proton / single event effect resisting capacity of the device. By the method, a single event effect of a space radiation environment for a semiconductor device for space navigation can be effectively and truly simulated, and the proton / single event effect resisting capacity of the device can be acquired accurately and sensitively.

Description

technical field [0001] The invention relates to the technical field of semiconductor device testing, in particular to a detection technology for the anti-proton single event effect capability of semiconductor devices used in aerospace. Background technique [0002] Satellite systems use a large number of semiconductor integrated circuits, such as microprocessors (CPU), digital signal processors (DSP), field programmable logic arrays (FPGA), memory (Memory), and gate circuits, etc., but semiconductors used in satellites Integrated circuits will encounter very harsh environments in space, such as radiation environments, thermal vacuum environments, and micrometeorite / space debris environments. [0003] The space radiation environment will cause ionization damage and / or atomic displacement damage to semiconductor integrated circuits. Atomic displacement damage is the displacement of atoms after high-energy protons are incident on semiconductor materials, causing lattice defect...

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Problems solved by technology

[0006] However, this method only analyzes and calculates the single-event turnover rate, and the ability of the device to resist the proton single-event effect is not accurate enough.

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