Low Noise Amplifier with Graphene Transistors

Abstract

The invention discloses a low-noise amplifier with a grapheme transistor. The low-noise amplifier comprises the grapheme transistor, a first inductor and a first capacitor, a second inductor and a second capacitor, an output end and an input end, a grid medium layer formed on the grid electrode and a channel layer formed on the source electrode, the drain electrode and the grid electrode, wherein the source electrode of the grapheme transistor is connected with the ground, the grid electrode is connected with bias voltage, and the source electrode is connected with working voltage; the first inductor and the first capacitor are connected between the drain electrode and the working voltage; the second inductor and the second capacitor are connected with the source electrode and the ground end; the grapheme transistor further comprises a substrate, a transition layer, a metal routing layer, an interlayer medium layer, a connection wire, the source electrode, the drain electrode and the grid electrode; the source electrode, the drain electrode and the grid electrode are formed above the interlayer medium layer; the source electrode, the drain electrode and the grid electrode comprise metal contact layers above the interlayer medium layer; the source electrode and the drain electrode are respectively connected with the connection wire through the metal contact layers; and the channel layer is a grapheme thin film. The low-noise amplifier provided by the invention has the advantages of low noise, high stability and high reliability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a low-noise amplifier with a graphene transistor. Background technique [0002] Low Noise Amplifier (LNA) is an important part of modern wireless communication, radar, electronic countermeasure system and other applications. It is often used in the front end of the receiving system to suppress noise interference and improve system sensitivity while amplifying the signal. In the low noise amplifier, the core component is a field effect transistor or an ordinary triode with signal amplification. Among them, the field effect transistor has the advantages of high input impedance, low noise, less affected by the environment, etc., and is more widely used than ordinary triodes. [0003] In current low-noise amplifiers, silicon-based field-effect transistors are mostly used. Ordinary silicon-based field effect transistors vary with size (especially the SiO 2 The size of the ox...

AI Technical Summary

Problems solved by technology

Ordinary silicon-based field effect transistors vary with size (especially the SiO 2 The size of the oxide layer) decreases, its thermal noise, channel noise and flicker noise become more and more obvious, and there is a problem of deterioration of the signal-to-noise ratio

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