Epitaxial growth method for gallium-nitride-based (GaN-based) light-emitting diode (LED)

Abstract

The invention relates to an epitaxial growth method for a gallium-nitride-based (GaN-based) light-emitting diode (LED), comprising the following steps of: annealing a substrate, then nitriding; cooling to grow a low temperature GaN buffer layer; rising the temperature of the substrate, thermally annealing the low temperature GaN baffer layer, epitaxially growing the high temperature GaN buffer layer; then growing a layer of an N-type GaN layer with stable doping concentration; growing light quantum well; growing multiple quantum wells of luminescent layer; seventhly, growling a P-type GaN layer with nitrogen (N2) as carrier gas; growing a P-type aluminum gallium nitride (AlGaN) layer; growing the P-type GaN layer; growing a P contact layer; reducing the temperature of a reaction chamber, annealing, then reducing to the room temperature. The method provided by the invention comprises high pressure growth of the P-type GaN layer after the P-type AlGaN layer, a high pressure growth condition can decrease the carbon generated in the epitaxial deposition process, decrease yellow belt and be capable of obtaining high-quality crystal, thereby obtaining a high-quality LED device and improving luminous efficiency and a working life of the device.

Description

[0001] technical field [0002] The invention belongs to the technical field of preparation of gallium nitride-based materials, and in particular relates to a gallium nitride-based light-emitting diode epitaxial growth method. Background technique [0003] The quality of P-type GaN crystal affects the working life and luminous efficiency of the device. The quality of P-type GaN material crystal is not high, which affects the quality and life of the light-emitting device, and will have a serious impact on the light-emitting diode. Only better crystal quality can be obtained. High-quality and long-life gallium nitride-based light-emitting diodes can only be obtained if P-type gallium nitride-based materials are used. Generally, when growing P-type GaN, it is difficult to obtain a P-type GaN layer with high crystal quality. Contents of the invention [0004] Aiming at the problem that the crystal quality of the P-type gallium nitride layer in the GaN-based light-emitting dio...

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Problems solved by technology

[0004] Aiming at the problem that the crystal quality of the P-type gallium nitride layer in the GaN-based light-emitting diode produced in the prior art is not good enough, which leads to the attenuation of the luminous efficiency and working life of the LED device, the present invention provides an epitaxial growth method of the GaN-based light-emitting diode

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