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Infrared optical window with double-sided anti-reflection structure

An infrared optical window and anti-reflection technology, applied in the field of infrared optical windows, can solve the problems of low transmittance, achieve the effect of increasing transmittance, improving sensitivity, and simple preparation process

Inactive Publication Date: 2012-11-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Most of the existing sub-wavelength anti-reflection infrared windows only consider making a single-sided anti-reflection structure on the incident surface, and the transmittance is low

Method used

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  • Infrared optical window with double-sided anti-reflection structure
  • Infrared optical window with double-sided anti-reflection structure
  • Infrared optical window with double-sided anti-reflection structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Step 1, silicon wafer surface treatment: use acetone to ultrasonically clean the double-sided polished silicon wafer, then rinse it with deionized water, then clean the silicon wafer with hydrofluoric acid, rinse it with deionized water, dry it with nitrogen, and put it in Dry in an oven, then cool to room temperature;

[0028] Step 2, double-sided vapor deposition of silicon nitride: use PECVD to vapor-deposit silicon nitride layers on both sides of the double-polished silicon wafer; the thickness of the silicon nitride layer is about 400-500nm;

[0029] Step 3, coating the incident surface: apply photoresist to the incident surface by the spin coating method; the spin coating speed is 3500 r / min, and the coating thickness is 800-1200nm;

[0030] Step 4, Baking before incident: Baking the silicon wafer coated with photoresist on the incident side; the baking temperature is 100°C, and the pre-baking time is 70s;

[0031] Step 5, incident surface exposure: use a non-con...

experiment example

[0048] The silicon infrared optical window with double-sided anti-reflection sub-wavelength structure prepared in Example 1 was used to conduct a transmittance comparison experiment with a double-sided polished silicon wafer and a silicon infrared optical window with anti-reflection sub-wavelength structure on one side.

[0049] like Figure 4As shown, the uppermost curve is the transmittance of the present invention, the middle curve is the transmittance of a silicon infrared optical window with an anti-reflection sub-wavelength structure on one side, and the bottom one is the transmittance of a double-sided polished silicon wafer. As can be seen from the figure, the transmittance of the silicon infrared optical window with double-sided anti-reflection sub-wavelength structure of the present invention is significantly higher than the other two: in the 8-14um wave band, the average transmittance of double-sided polished silicon wafers is 45 %, while the average transmittance o...

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Abstract

The invention discloses an infrared optical window with a double-sided anti-reflection structure, belonging to the technical field of infrared optical windows. The infrared optical window with the double-sided anti-reflection structure comprises an infrared optical window, wherein anti-reflection structures are etched on an incidence face and an exit face of the infrared optical window. By utilizing the structure, the transmissivity of the infrared window can be significantly increased, and the sensitivity of an infrared device can be improved. According to the infrared optical window disclosed by the invention, the average transmissivity measured in a wave band range of 8-14 um achieves 65 percent and is improved by 20 percent, wherein the maximum transmissivity achieves 73 percent.

Description

technical field [0001] The invention belongs to the technical field of infrared optical windows, and in particular relates to an infrared optical window with a double-sided anti-reflection structure. Background technique [0002] The existing materials used to make infrared optical windows need to be treated with surface anti-reflection when they are used as infrared optical windows due to their large reflection coefficients. The traditional method is to deposit single-layer or multi-layer anti-reflection coating on its surface. However, the method of depositing thin films has inherent problems such as adhesion, corrosion resistance, stability, thermal expansion mismatch, component penetration and diffusion, and inability to find suitable materials. The sub-wavelength anti-reflection structure is a periodic structure with a structure size close to or smaller than the wavelength of the light wave produced on the surface of the substrate by the semiconductor large-scale integ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/11
Inventor 何少伟陈鹏杰王明星胡庆徐向东李伟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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