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Negative electrode active material for nonaqueous electrolyte secondary battery

A negative electrode active material, non-aqueous electrolyte technology, applied in the field of non-aqueous electrolyte secondary battery negative electrode, non-aqueous electrolyte secondary battery field, can solve the problem of low theoretical discharge capacity, difficult to cope with the increase in power consumption for on-board use Battery use and other issues, to achieve the effect of improved charge-discharge cycle characteristics, good electronic conductivity, and improved oxidation resistance

Active Publication Date: 2012-11-14
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the low theoretical discharge capacity of carbonaceous materials, it is difficult to cope with the increase in power consumption caused by the multifunctionalization of small electrical and electronic equipment and the use as a battery for vehicles.

Method used

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  • Negative electrode active material for nonaqueous electrolyte secondary battery
  • Negative electrode active material for nonaqueous electrolyte secondary battery
  • Negative electrode active material for nonaqueous electrolyte secondary battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~3

[0068] Using International Publication No. 01 / 081033 pamphlet figure 2 The device described in , carries out the steam explosive atomization method to produce a silicon solid solution with boron in solid solution. The solid solution amount of boron was set as shown in Table 1 below. In the device shown in the figure, the inner diameter of the cylindrical mixing nozzle 2 is set to 2.0 mm. The amount of coolant swirling in the mixing nozzle was set at 100 liters / min. Use room temperature water as the coolant. The mixed melt of silicon and boron was preheated to 1600° C., and was dropped (free-fall) into the mixing nozzle 2 at a time of 13 g. The cooling rate at this time is estimated to be 10 by the above-mentioned estimation method. 6 ~10 8 K / s. The XRD diffraction pattern (ray source: CuKα) of the negative electrode active material composed of the silicon solid solution obtained above is shown in figure 2 middle. The XRD diffraction pattern of pure silicon is also sh...

Embodiment 4

[0072] Except having set the composition of the negative electrode active material to the composition shown in Table 1, it carried out similarly to Examples 1-3, and obtained the negative electrode active material. The negative electrode active material obtained in this way is composed of a mixture in which ferrosilicon alloy is precipitated in a silicon solid solution matrix in which boron is solid-dissolved. Precipitation of ferrosilicon alloy can be confirmed by detecting silicon and iron at the same position in the element distribution of the micro-region of the cross section of the active material particle using EDX. The XRD diffraction pattern of this mixture is shown in Figure 4 (a). In addition, the enlarged XRD diffraction pattern in the range of 2θ=87~90 degrees in the figure is shown in Figure 4 (b). Table 1 shows the degree of shift of the position of the XRD peak of the mixture corresponding to the peak relative to the position of the XRD peak assigned to the (...

Embodiment 5 and 6

[0074] In Example 1, except having used germanium in the amount shown in the following Table 1 instead of boron, it carried out similarly to Example 1, and obtained the negative electrode active material which consists of Si-Ge solid solution. Table 1 shows the degree of shift of the position of the XRD peak of the negative electrode active material corresponding to the position of the XRD peak attributable to the (422) plane of silicon for this solid solution. In addition, the lattice distortion of this mixture was calculated|required using Hall's method. The results are also shown in Table 1. In Table 1, regarding the shift value of the position of the XRD peak, a positive number represents a shift to a high angle side, and a negative number represents a shift to a low angle side.

[0075] Table 1

[0076]

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Abstract

A negative electrode active material for a nonaqueous electrolyte secondary battery, comprising a silicon solid solution in which one or more members selected from among a semimetal element or a metal element of group 3, a semimetal element or a metal element of group 4 (excluding silicon) and a nonmetal or semimetal element of group 5 are solid-solubilized in silicon. Relative to the position of the diffraction peak in XRD assignable to face (422) of silicon, the position of the diffraction peak in XRD of said solid solution, which corresponds to the aforesaid peak, shifts by 0.1-1 DEG toward the low angle or high angle side. The lattice distortion of said solid solution measured by XRD is 0.01-1%.

Description

technical field [0001] The present invention relates to an active material used in negative electrodes of non-aqueous electrolyte secondary batteries such as lithium secondary batteries. The present invention also relates to a negative electrode for a non-aqueous electrolyte secondary battery including the active material. Furthermore, the present invention also relates to a nonaqueous electrolyte secondary battery including the negative electrode. Background technique [0002] Conventionally, it has been mainstream to use carbonaceous materials as negative electrode active materials for nonaqueous electrolyte secondary batteries. However, since carbonaceous materials have a low theoretical discharge capacity, it is difficult to cope with the increase in power consumption due to the multifunctionalization of small electric and electronic devices and their use as automotive batteries. [0003] As a negative electrode active material that replaces carbonaceous materials, mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/38H01M4/36H01M10/0566
CPCY02E60/12H01M4/386H01M4/362C22C28/00H01M10/052H01M4/134H01M4/364Y02E60/10
Inventor 井手仁彦井上大辅Y·M·托多罗夫柴村夏实田平泰规
Owner MITSUI MINING & SMELTING CO LTD
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