Epitaxial wafer of light-emitting diode (LED) and making method of epitaxial wafer
A technology of light-emitting diodes and epitaxial wafers, applied in the field of diodes, can solve problems affecting internal quantum efficiency, energy band bending in quantum well regions, and strengthen the polarization of quantum well regions, so as to improve internal quantum efficiency and increase the probability of electron tunneling , Improve the effect of antistatic ability
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Embodiment 1
[0021] See figure 1 The first embodiment of the present invention provides an epitaxial wafer of a light emitting diode, the epitaxial wafer includes a substrate layer 1, a buffer layer 2, an N-type layer 3, an MQW layer 4, and a P-type layer 5 sequentially covering the substrate layer 1. The N-type layer 3 is made of n-type doped GaN; the MQW layer 3 includes a number of quantum barrier layers 6 and a number of quantum well layers 7 grown alternately with each quantum barrier layer 6. Wherein, at least one quantum barrier layer 6 of the plurality of quantum barrier layers 6 includes three sub-quantum barrier layers; the sub-quantum barrier layer located in the middle of the three sub-quantum barrier layers is made of n-type doped Al x In y Ga 1-x-y Made of N, the n-type doping concentration is not greater than the n-type doping concentration of the N-type layer 3; the other two sub-quantum barrier layers are made of undoped GaN; where 0<x<1, 0<y< 1.
[0022] The technical soluti...
Embodiment 2
[0024] The embodiment of the present invention provides an epitaxial wafer for a light emitting diode, which includes a substrate layer 1, a buffer layer 2, an N-type layer 3, an MQW layer 4, and a P-type layer 5 sequentially covering the substrate layer 1.
[0025] Specifically, the substrate layer 1 is a sapphire substrate.
[0026] Specifically, the buffer layer 2 is a composite layer, including a low-temperature buffer layer and an undoped GaN layer.
[0027] Specifically, the N-type layer 3 is made of n-type doped GaN. Preferably, the n-type doping is obtained by Si doping, and the doping concentration is 5×10 18 cm -3 .
[0028] Wherein, the MQW layer 3 includes a plurality of quantum barrier layers 6 and a plurality of quantum well layers 7 grown alternately with each quantum barrier layer 6. In addition, at least one quantum barrier layer 6 in all the quantum barrier layers 6 includes three sub-quantum barrier layers; the sub-quantum barrier layer located in the middle of the...
Embodiment 3
[0038] The third embodiment of the present invention provides a method for manufacturing an epitaxial wafer of a light-emitting diode. The method includes providing a substrate and sequentially growing a buffer layer, an N-type layer, and a MQW layer on the substrate. Quantum well layers and P-type layers in which each quantum barrier layer alternates with each other. Wherein, growing at least one quantum barrier layer in the plurality of quantum barrier layers includes:
[0039] Using undoped GaN, the quantum barrier layer is grown to the first thickness;
[0040] Use n-doped Al x In y Ga 1-x-y N is deposited with a predetermined doping concentration to grow the quantum barrier layer to a second thickness;
[0041] Using undoped GaN, the quantum barrier layer is grown to the third thickness;
[0042] Wherein, the predetermined doping concentration is not greater than the doping concentration of the N-type layer; 0
[0043] Further, the second thickness is 0-10 nm; the fir...
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