Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Resistive random access memory and manufacturing method thereof

A resistive memory, memory technology, applied in semiconductor devices, electrical solid devices, electrical components, etc., can solve the problem of random formation of conductive filaments, and achieve the effect of solving the discrete programming voltage, having concentration, and improving stability.

Inactive Publication Date: 2012-10-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF6 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The embodiment of the present invention provides a resistive variable memory and its manufacturing method, which solves the problem of random formation of conductive filaments, makes the programming voltage of the device centralized, and improves the stability of the device operation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0043] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0044] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a resistive random access memory and a manufacturing method thereof. The memory comprises a lower electrode, a local control electrode located on the lower electrode, a storage medium layer located on the lower electrode and the local control electrode, and an upper electrode located on the storage medium layer. Through the local control electrode located on the lower electrode, local electric field intensity in the storage medium is enhanced, so formation of conductive filaments along the control electrode is facilitated, so that the formation and disconnection of the conductive filaments are effectively controlled, thereby the programming voltage discrete problem caused by the random formation of the conductive filaments is solved, so the concentricity of a programming voltage of a device is facilitated, and the working stability of the device is improved.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing technology, more specifically, to a resistive variable memory and its manufacturing method. Background technique [0002] With the popularity of portable personal devices, non-volatile memory has gradually become the focus of research and development in the semiconductor industry due to its advantages of maintaining a memory state and operating with low power consumption when there is no power supply. At present, the non-volatile memory on the market is still dominated by flash memory (flash). Due to shortcomings such as insufficient time, the focus of research and development has gradually shifted to a new type of non-volatile memory that can replace flash memory. [0003] Resistive RAM (RRAM) has gradually become a new type of non-volatile memory due to its advantages of low write operation voltage, short write and erase time, long retention time, non-destructive read, mul...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 刘琦刘明龙世兵吕杭炳张森李颖涛王艳连文泰谢常青
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com