crosswise double diffusion MOFET and manufacturing method thereof

Abstract

The invention provides a crosswise DMOS with cupped source electrode contact and a method for forming the crosswise DMOS. The crosswise DMOS comprises a cupped source electrode contact, wherein the cupped source electrode contact comprises a cupped part which longitudinally extends and penetrates the source area of the crosswise DMOS and contacts the body area,and the cupped part is electrically coupled with the source area and the body area. The crosswise DMOS not only has smaller size, but also is low in production cost.

Description

[0001] Related references [0002] This application claims priority to and benefit from, and is hereby incorporated in its entirety by, Patent Application No. 13 / 213,011 filed in the United States on August 18, 2011. technical field [0003] Embodiments of the present invention relate to semiconductor devices, and more particularly, to lateral double-diffused metal-oxide-semiconductor field effect transistors. Background technique [0004] Lateral double-diffused metal-oxide-semiconductor field-effect transistors (LDMOS) are widely used in various integrated power management circuits. Generally, LDMOS is used as a power transistor in these power management circuits to continuously switch on and off in response to a control signal to realize power conversion. [0005] Figure 1A A schematic longitudinal cross-sectional view of an LDMOS 100 is shown. Such as Figure 1A As shown, the LDMOS 100 can be formed on a P-type semiconductor substrate 101 . The LDMOS 100 may include ...

AI Technical Summary

Problems solved by technology

Therefore, the fabrication of conventional lateral DMOS 100 is not only complicated but also expensive

Images