Method for measuring ohmic contact resistivity between black silicon material and metal electrodes
A metal electrode and ohmic contact technology, applied in the direction of measuring resistance/reactance/impedance, measuring electrical variables, measuring devices, etc., can solve the problems of testing the specific contact resistivity of black silicon materials and metal electrodes, and achieve convenient specific contact resistivity , reduce the error, the effect of high accuracy
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[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0036] Because the present invention needs to quote the dot-shaped transmission line model method to test the specific contact resistivity between the black silicon material and the metal electrode, below in conjunction with the test circuit structure provided by the present invention, the working principle of the dot-shaped transmission line model method is necessary instruction of.
[0037] Such as figure 1 As shown, at first, at least 6 dot-shaped contact electrodes (such as figure 1 , 2 , 3, 4, 5, and 6), each dot-shaped electrode consists of a radius r 0 The inner contact circle and an outer contact circle whose inner diameter gradually increases, where the inner diameter of the outer contact circle is r n , and ...
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