Method for measuring ohmic contact resistivity between black silicon material and metal electrodes

Abstract

The invention provides a method for measuring ohmic contact resistivity between black silicon material and metal electrodes. The method provided by the technical scheme comprises the following steps of: aiming at the black silicon material which is obtained by etching the mono-crystal silicon surface, depositing at least six dot-shaped metal electrodes on the surface of the black silicon material by adopting the ohmic contact preparation technology; depositing the metal counter electrodes on the back surface of the mono-crystal silicon; leading an ultrafine metal wire from the inner contact cycle of each dot-shaped metal electrode by adopting the hot pressure welding technology; respectively bonding the metal wires on the outer-leading electrodes of which the areas are large; continuously supplying constant reverse voltage bias between each dot-shaped metal electrode and the counter electrode by adopting a variable voltage source so as to ensure that the heterojunction of the black silicon/ mono-crystal silicon is completely offset; and under the condition that the heterojunction of the black silicon/ mono-crystal silicon is completely offset, testing the contact resistivity of the metal/black silicon by using a dot-shaped transmission line mode method.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic materials and devices, in particular to a method for testing the ohmic contact resistivity of a black silicon material and a metal electrode. Background technique [0002] Black silicon is a new surface microstructure material obtained by the research team of Professor Mazur of Harvard University when using a femtosecond laser to irradiate the surface of a single crystal silicon wafer in a certain gas environment. This kind of silicon material with quasi-regular arrangement of micron-scale peak structure on the surface has good photoelectric properties, for example: almost all absorption of light from the visible to near-infrared band (250-2500nm), and high responsiveness to incident light; good Field emission, photoluminescence and terahertz radiation characteristics. The excellent photoelectric properties make black silicon materials have great potential application value i...

AI Technical Summary

Problems solved by technology

[0005] For the contact between the black silicon material and the metal electrode, due to the unique metal / black silicon / single crystal silicon sandwich structure (the general thin film test structure only has a metal / thin film two-layer structure), there are black silicon / single crystal silicon heterogeneous The material junction makes part of the test current passing through the two sides of the electrode pass through the single crystal silicon, so it is impossible to directly use the "conventional transmission line model method" to test the specific contact resistivity ρ between the black silicon material and the metal electrode c

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