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Method for preparing full back electrode solar battery

A technology for solar cells and full-back electrodes, applied in the field of preparing full-back electrode solar cells, can solve the problems of waste of silicon material, unfavorable industrialized production, complicated process steps, etc., so as to reduce costs, save silicon materials, and simplify the process. Effect

Inactive Publication Date: 2012-10-03
TRINASOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process needs to etch off the p+ layer on the front side, resulting in a waste of silicon material, and the process steps are cumbersome, which is not conducive to industrial production

Method used

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  • Method for preparing full back electrode solar battery
  • Method for preparing full back electrode solar battery
  • Method for preparing full back electrode solar battery

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Embodiment Construction

[0026] like Figure 7 As shown, a method for preparing a full back electrode solar cell is to prepare a silicon dioxide layer 2 on the back side of a silicon wafer 1, and selectively etch the silicon dioxide layer 2 on the back side. The bare area forms n+ layer 3 through phosphorus diffusion, and then evaporates metal aluminum 4 on the silicon dioxide layer 2 and n+ layer 3 where metallization is required, and performs laser on the place where aluminum 4 grows on silicon dioxide layer 2 After sintering, the aluminum 4 infiltrates into the Si to form the p+ layer 5 and form an ohmic contact.

[0027] The specific implementation steps are as follows:

[0028] 1) Select a p-type monocrystalline silicon wafer 1, such as figure 1 shown;

[0029] 2) Clean the surface and perform texturing on the front surface, such as figure 2 shown;

[0030] 3) dry oxygen oxidation, on both sides of the silicon wafer 1, prepare a silicon dioxide layer 2 that is both used for a mask and for p...

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Abstract

The invention relates to the technical field of a solar battery preparation method, and especially relates to a method used for preparing a full back electrode solar battery. The method comprises the following steps: preparing a silicon oxide layer on a silicon slice back, carrying out selectivity sculpture on the back silicon oxide layer, and forming an n+ layer on a naked region which is not protected by the silicon oxide layer through phosphorus diffusion, and subsequently, coating metal aluminum on a region which needs to carry out metalation on the silicon oxide layer and the n+ layer, carrying out laser sintering in an aluminum region on the silicon oxide layer, enabling the aluminium to infiltrate Si so as to form a p+ layer, and forming an ohm touch. The method provided by the invention has the beneficial effects that the preparation flow path of a full back electrode is greatly simplified, the technological process is simple, the silicon layer sculpture is not needed, the silicon material is saved, and the cost of the whole preparation flow is reduced.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation methods, in particular to a method for preparing full-back electrode solar cells. Background technique [0002] The full back electrode solar cell is a battery that places both the positive and negative electrodes on the back of the battery. This special structure of electrode arrangement can completely eliminate the shading loss of the metal electrode on the light receiving surface and improve the photogenerated current of the battery. The full back electrode solar cell The battery is the so-called integrated back contact (IBC) structure. At present, the highest efficiency of this type of battery produced by SunPower Company of the United States has reached 24%. [0003] However, the current common process for preparing all-back-electrode solar cells is very cumbersome, because a key point of all-back-electrode solar cells is to form two different heavily doped regions, n+ and p+,...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 袁声召
Owner TRINASOLAR CO LTD
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