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Photoelectric conversion element

A technology for photoelectric conversion elements and photoelectric conversion layers, which is applied in electrical components, photovoltaic power generation, circuits, etc., and can solve problems such as insufficient absorption of the solar spectrum.

Inactive Publication Date: 2012-10-03
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] General photoelectric conversion elements using semiconductors cannot sufficiently absorb the solar spectrum due to the absorption wavelength band determined by the band gap of the semiconductor
For example, silicon monocrystalline solar cells can only absorb light from 300-1100 nanometers to provide power generation efficiency of about 20% or less

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0138] Example 1 (single crystal silicon, S, Ag, nano-mesh electrode)

[0139] will refer to Figures 14A-16D A method of manufacturing the photoelectric conversion element according to Example 1 is described. Figures 14A-16D is a cross-sectional view showing the manufacturing steps of the photoelectric conversion element according to the embodiment.

[0140] Such as Figure 14A As shown, the p-type silicon single crystal substrate 30 was prepared to have a thickness of 500 microns and 1×10 16 Cubic centimeter doping concentration of the substrate. A silicon dioxide film 31 having a thickness of 150 nm is formed on a p-type silicon single crystal substrate 30 by thermal oxidation.

[0141] Such as Figure 14B As shown, after a resist (THMR IP3250, TOKYO OHKA KOGYO Co., Ltd.) solution was coated on the silicon dioxide film 31 by spin coating at 2000 rpm for 30 seconds, the coated resist was heated The plate was heated at 110°C for 90 seconds to evaporate the solvent. Th...

example 2

[0159]The results show that the S-doped long-wavelength absorbing layer 33 and the nano-mesh electrode 38 realize an increase in photoelectric conversion efficiency in the long-wavelength region of light due to light absorption in the long-wavelength region of light. Example 2 (single crystal silicon, S, Au, nano-mesh electrodes)

[0160] will refer to Figures 17A-19D A method of manufacturing the photoelectric conversion element according to Example 2 is described. Figures 17A-19D is a cross-sectional view showing the manufacturing steps of the photoelectric conversion element according to Example 2.

[0161] Such as Figure 17A As shown, the preparation has a thickness of 500 µm and a 1 x 10 16 cm -3 A p-type silicon single crystal substrate 30 with a doping concentration of 1000000000000000000000000000000000000000000000000000000. The surface of p-type silicon single crystal substrate 30 is thermally oxidized to form silicon dioxide film 31 having a thickness of 150 n...

example 3

[0180] The results show that the S-doped long-wavelength absorbing layer 33 and the nano-mesh electrode 38 realize an increase in photoelectric conversion efficiency in the long-wavelength region of light due to light absorption in the long-wavelength region of light. Example 3 (single crystal silicon, S-O, Cu, nano-mesh electrodes)

[0181] will refer to Figures 20A-22D A method of manufacturing the photoelectric conversion element according to Example 3 is described. Figures 20A-22D is a sectional view showing a manufacturing step of the photoelectric conversion element according to Example 3.

[0182] Such as Figure 20A As shown, the preparation has a thickness of 500 µm and a 1 x 10 16 cm -3 A p-type silicon single crystal substrate 30 with a doping concentration of 1000000000000000000000000000000000000000000000000000000. The surface of p-type silicon single crystal substrate 30 is thermally oxidized to form silicon dioxide film 31 having a thickness of 150 nm.

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Abstract

A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.

Description

[0001] Related Application Cross Reference [0002] This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2011-069149 filed on March 28, 2011 and Prior Japanese Patent Application No. 2011-218681 filed on September 30, 2011, which The entire content of the application is hereby incorporated by reference. technical field [0003] The embodiments basically relate to photoelectric conversion elements. Background technique [0004] A general photoelectric conversion element using a semiconductor cannot sufficiently absorb the solar spectrum due to the absorption wavelength band determined by the band gap of the semiconductor. For example, silicon monocrystalline solar cells can only absorb light in the range of 300-1100 nanometers to provide power generation efficiency of about 20% or less. Therefore, in order to improve the power generation efficiency of a general photoelectric conversion element, it is necessary to intro...

Claims

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Application Information

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IPC IPC(8): H01L31/04H01L31/0352
CPCH01L31/0288H01L31/02168H01L31/0352H01L31/022425H01L31/04Y02E10/50Y02E10/546Y02E10/548H01L31/0224H01L31/042H01L31/06
Inventor 藤本明中西务中村健二益永久美浅川钢儿
Owner KK TOSHIBA
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