Method for repairing ion implantation damage

Abstract

The invention provides a method for repairing ion implantation damage, comprising the following steps of: providing a semiconductor substrate, and implementing ion implantation process on the semiconductor substrate; performing heat treatment process on the semiconductor substrate in a hydrogen atmosphere, so as to repair ion implantation damage; performing metallization treatment on the semiconductor substrate; and forming a metal connection wire above the semiconductor substrate. Via the method, the lattice damage on the surface of the semiconductor substrate caused by ion implantation can be repaired, thus effectively preventing the deposited metal from entering in the semiconductor substrate during the subsequent metallization treatment process, and then reducing a leakage current, and avoiding a problem of the penetration of a device.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process technology, in particular to a method for repairing ion implantation damage. Background technique [0002] With the development of the times, small-scale integrated circuits have developed to today's millions of chips, in which the reduction of the feature pattern size of a single component has played an important role in promoting, and the feature size has been reduced to 45nm, or even below 30nm. The reduction of feature size and the increase of circuit density have brought many benefits. In terms of circuit performance, the speed of the circuit has been continuously improved, the transmission distance has been shortened, and the space occupied by a single device has been reduced, which shortens the time it takes for information to pass through the chip. Faster performance benefits anyone who has ever waited for a computer to complete a simple job. However, the increase in device density...

AI Technical Summary

Problems solved by technology

Specifically, the process of forming metal wiring includes performing metallization on the semiconductor substrate. The metallization process includes depositing a metal layer on the surface of the semiconductor substrate by physical vapor deposition and rapid thermal annealing to form metal silicide. During the process, the metal layer is deposited on the surface of the semiconductor substrate, which will enter the semiconductor substrate along the damaged crystal lattice, and even enter the channel under the gate, conduct the channel, and cause the device to fail to turn on and off

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