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Zinc-doped indium oxide nano gas sensitive material and preparation method thereof

A gas-sensitive material, zinc-doped technology, applied in chemical instruments and methods, luminescent materials, inorganic chemistry, etc., can solve the problem of high cost, and achieve the effects of fast response recovery, high sensitivity, and easy operation.

Inactive Publication Date: 2012-09-05
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although noble metals can improve the gas-sensing performance of indium oxide to ethanol, the cost is high

Method used

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  • Zinc-doped indium oxide nano gas sensitive material and preparation method thereof
  • Zinc-doped indium oxide nano gas sensitive material and preparation method thereof
  • Zinc-doped indium oxide nano gas sensitive material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A. Dissolve indium chloride, zinc nitrate and hexamethylenetetramine in deionized water to prepare a solution with a concentration of 0.075mol / L, and then mix the three solutions at a volume ratio of 1:1:1. Sonicate for 15 minutes to prepare a reaction solution.

[0037]B. Put the reaction solution in A in a water bath and react at 70°C for 12 hours to obtain a precipitate; purify the precipitate at 20°C for 144 hours and then centrifuge it. The speed of the centrifuge is 4000r / min. The precipitate was washed with deionized water and ethanol.

[0038] C. The separated precipitate of B was dried in an oven at 60°C for 24 hours, and then calcined at 500°C for 3 hours to obtain zinc-doped indium oxide nanomaterials.

[0039] The obtained zinc-doped indium oxide was uniformly coated on the surface of the ceramic tube, and then aged at 300° C. for 48 hours. Solder the ceramic tube on the circuit board to conduct the gas sensitivity test directly, the results are shown in ...

Embodiment 2

[0041] A. Dissolve indium chloride, zinc nitrate and hexamethylenetetramine in deionized water to prepare a solution with a concentration of 0.050mol / L, and then mix these three solutions at a volume ratio of 1:0.0376:1, Sonicate for 15 minutes to prepare a reaction solution.

[0042] B. Put the reaction solution in A in a water bath and react at 70°C for 4 hours to obtain a precipitate; purify the precipitate at 20°C for 60 hours and then perform centrifugation. The centrifuge speed is 4000r / min, and then The precipitate was washed with deionized water and ethanol.

[0043] C. The separated precipitate of B was dried in an oven at 60°C for 4 hours, and then calcined at 400°C for 3 hours to obtain zinc-doped indium oxide nanomaterials.

[0044] The obtained zinc-doped indium oxide was evenly coated on the surface of the ceramic tube, then aged at 300°C for 48 hours, soldered on the circuit board and directly tested for gas sensitivity, the results are shown in Figure 5-10 ....

Embodiment 3

[0046] A. Dissolve indium nitrate, zinc nitrate and hexamethylenetetramine in deionized water to prepare a solution with a concentration of 0.050mol / L, then mix these three solutions at a volume ratio of 1:0.01:1, and ultrasonically After 15 minutes, the reaction solution was prepared.

[0047] B. Put the reaction solution in A in a water bath and react at 70°C for 4 hours to obtain a precipitate; purify the precipitate at 20°C for 66 hours and then centrifuge the centrifuge at a speed of 4000r / min. The precipitate was washed with deionized water and ethanol.

[0048] C. The separated precipitate of B was dried in an oven at 60°C for 4 hours, and then calcined at 400°C for 3 hours to obtain zinc-doped indium oxide nanomaterials.

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Abstract

The invention provides a zinc-doped indium oxide nano gas sensitive material and a preparation method thereof. The zinc-doped indium oxide nano gas sensitive material can be represented by ZnO-In2O3, wherein the mole ratio of Zn to In is (0.0042-1): 1; and the particle diameter is 10 to 30 nanometers. The zinc-doped indium oxide nano gas sensitive material is prepared by taking indium salt, zinc salt and a precipitant as raw materials by adopting a chemical solution method under the condition of no template, no surfactant and relatively low temperature; and the obtained zinc-doped indium oxide particles are uniformly scattered, and an agglomeration phenomenon is avoided. The zinc-doped indium oxide nano gas sensitive material is sensitive to ethanol and nitrogen dioxide, has the characteristics of low working temperature, high response recovery speed, high sensitivity, high selectivity and the like and can be used as a sensitive material of an ethanol and nitrogen dioxide sensor. The zinc-doped indium oxide nano gas sensitive material prepared by the method is relatively high in ultraviolet absorption performance and relatively high in fluorescence emission performance and can be used as a luminous material.

Description

technical field [0001] The invention relates to a zinc-doped indium oxide nano-semiconductor gas-sensing material and a preparation method thereof. The gas-sensing material has good gas-sensing properties to ethanol and nitrogen dioxide, and can be used to make gas sensors for ethanol and nitrogen dioxide. At the same time, the zinc-doped indium oxide nanometer material has better ultraviolet absorption and fluorescence emission, and can be used as a light-emitting material. Background technique [0002] As a direct wide-bandgap semiconductor material, indium oxide can be used as a gas sensor due to its high sensitivity. Zinc oxide is a semiconductor material with low cost, environmental friendliness and good compatibility. It has broad application prospects in gas sensing . [0003] Literature [1] Applied Surface Science 256 (2010) 5051–5055, J. C. Tu et al. doped the noble metal platinum (Pt) in indium oxide, which greatly improved the sensor’s gas sensitivity response...

Claims

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Application Information

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IPC IPC(8): C01G15/00C09K11/62
Inventor 顾福博孔令青王志华
Owner BEIJING UNIV OF CHEM TECH
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