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Substrate for power module, manufacturing method, substrate with heat radiator and power module

A technology for power modules and substrates, which is applied in the manufacture of semiconductor devices, electric solid-state devices, and semiconductor/solid-state devices, etc., can solve problems such as interface peeling, and achieve the effect of preventing cracks

Active Publication Date: 2012-08-29
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, even when the surface roughness is adjusted to Ra=0.1 μm or less by polishing, interfacial peeling may occur in the same manner.

Method used

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  • Substrate for power module, manufacturing method, substrate with heat radiator and power module
  • Substrate for power module, manufacturing method, substrate with heat radiator and power module
  • Substrate for power module, manufacturing method, substrate with heat radiator and power module

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Experimental program
Comparison scheme
Effect test

Embodiment

[0129] A comparative experiment performed to confirm the effectiveness of the present invention will be described.

[0130] A circuit layer made of 4N aluminum with a thickness of 0.6 mm and a metal layer made of 4N aluminum with a thickness of 0.6 mm were joined to a ceramic substrate made of AlN with a thickness of 0.635 mm to produce a substrate for a power module.

[0131] Here, Si, Cu, and additive elements are fixed to the bonding surface of the aluminum plate (4N aluminum) used as the circuit layer and the metal layer to form an anchor layer, and the metal plate and the ceramic substrate are laminated and heated under pressure to join the metal plate and the ceramic substrate. .

[0132] Furthermore, various test pieces in which the added elements to be fixed were changed were produced, and the bonding reliability was evaluated using these test pieces. As an evaluation of bonding reliability, the bonding rate after repeating 2000 cycles of cooling and heating (-45°C to...

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PUM

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Abstract

The invention provides a substrate for a power module, a substrate with a heat radiator for the power module, the power module and a manufacturing method of the substrate for the power module, wherein a metal plate and a ceramic substrate of the substrate for the power module are combined firmly and are high in reliability of thermal cycle. The substrate (10) for the power module is characterized in that aluminum metal plates (12 and 13) are jointed with the surface of the ceramic substrate (11) in a laminated manner, Si and Cu are contained in the metal plates (12 and 13), moreover, more than one or two adding elements of Zn,Ge, Ag, Mg, Ca, Ga and Li is or are contained in the metal plates through a solid solution method, and in the metal plates (12 and 13), the total concentration of Si and Cu close to the interface of the ceramic substrate (11) and the adding elements is set to be more than 0.05% (mass percent) and less than 5% (mass percent).

Description

technical field [0001] The present invention relates to a substrate for a power module used in a semiconductor device that controls large current and high voltage, a substrate for a power module with a heat sink provided with the substrate for the power module, a power module, and a method for manufacturing the substrate for the power module . Background technique [0002] Since the power element used for power supply among semiconductor elements has a relatively high heat generation, as the substrate on which the power element is mounted, for example, as shown in Patent Document 1, the following substrate for a power module is used: a substrate made of AlN (nitrided An Al (aluminum) metal plate is bonded to a ceramic substrate made of aluminum) by brazing. [0003] And, this metal plate is formed as a circuit layer, and a power element (semiconductor element) is mounted on the metal plate via solder. [0004] In addition, it has been proposed to bond a metal plate such as...

Claims

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Application Information

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IPC IPC(8): H01L23/14H01L23/485H01L23/36H01L21/48
CPCH01L2224/32225
Inventor 殿村宏史长友义幸黑光祥郎
Owner MITSUBISHI MATERIALS CORP
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