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TFT (thin film transistor) and manufacturing method thereof

A technology for thin film transistors and a manufacturing method, which is applied in the fields of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of inability to form ohmic contacts, poor contact performance, affecting the on-state current and stability of thin-film transistors, and the like. Uncontrollable composition, avoidance of influence, improved stability and effect of on-state current

Inactive Publication Date: 2012-08-22
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In the existing thin film transistors with oxide semiconductors as the active layer, the contact performance between the source and drain electrodes and the active layer is poor, and sometimes even ohmic contact cannot be formed, which greatly affects the on-state current and stability of the thin film transistor.

Method used

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  • TFT (thin film transistor) and manufacturing method thereof
  • TFT (thin film transistor) and manufacturing method thereof
  • TFT (thin film transistor) and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment approach 1

[0044] Such as figure 1 As shown, the thin film transistor of the present invention includes: a gate electrode layer 101 is disposed on a substrate 100, a gate insulating layer 102 is disposed on the gate electrode layer 101, and an oxide layer is disposed on the gate insulating layer 102. The semiconductor layer 103, that is, the active layer, is subjected to ion implantation or plasma treatment on both sides of the oxide semiconductor layer 103 to form a highly conductive first transition region 103a and a second transition region 103b, wherein the first transition region 103a and The second transition region 103b has the same elemental composition and resistivity. Between the first transition region 103a and the second transition region 103b is a channel region, a source electrode layer 104a is arranged on the first transition region 103a, and the first transition region 103a and the source electrode layer 104a An ohmic contact is formed between them, a drain electrode lay...

Embodiment approach 2

[0053] Such as Figure 2a-Figure 2d with figure 1 As shown, the manufacturing method of the thin film transistor of the present invention comprises:

[0054] Such as Figure 2a As shown, a gate electrode layer 101 is formed on a substrate 100;

[0055] Such as Figure 2b As shown, a gate insulating layer 102 is formed on the gate electrode layer 101;

[0056] Such as Figure 2c As shown, an oxide semiconductor layer 103 is formed on the gate insulating layer 102 by sputtering or other methods;

[0057] Such as Figure 2d As shown, a non-adjacent first transition region 103a and a second transition region 103b are formed on the oxide semiconductor layer 103 by means of ion implantation or plasma treatment, and the first transition region 103a and the second transition region 103a The resistivity of the transition region 103b is lower than the resistivity of the channel region between them;

[0058] Such as figure 1 As shown, a source electrode layer 104a is formed on t...

Embodiment approach 3

[0067] Such as image 3 As shown, the thin film transistor of the present invention includes: a buffer layer 201 is disposed on a substrate 200, an oxide semiconductor layer 202, that is, an active layer, is disposed on the buffer layer 201, and an oxide semiconductor layer 202 is disposed on the buffer layer 201. Ion implantation or plasma treatment is performed on both sides of the semiconductor layer 103 to form a highly conductive first transition region 202a and a second transition region 202b, wherein the first transition region 202a and the second transition region 202b have the same elemental composition and resistance Rate. Between the first transition region 202a and the second transition region 202b is a channel region, a source electrode layer 203a is arranged on the first transition region 202a, and the first transition region 202a and the source electrode layer 203a A contact region is formed between them, a drain electrode layer 203b is disposed on the second t...

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Abstract

The invention provides a TFT (thin film transistor), comprising a substrate, a gate electrode layer, a gate electrode insulating layer, an oxide semiconductor layer, a source electrode layer and a drain electrode layer, wherein the gate electrode insulating layer is arranged on the gate electrode layer; the oxide semiconductor layer is arranged on the gate electrode insulating layer and comprises a first transition area, a second transition area and a channel area, the first transition area and the second transition are not mutually adjacent and the channel area is arranged between the first transition area and the second transition area; and the source electrode layer and the drain electrode layer are arranged on the first transition area and the second transition area, the resistivity of the first transition area and the second transition area is lower than the resistivity of the channel area, the first transition area and the source electrode layer form ohm contact, and the second transition area and the drain electrode layer also form the ohm contact. The invention further provides a manufacturing method of the TFT. Through the technical scheme of the invention, the stability and the on-state current of the TFT are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a thin film transistor using an oxide semiconductor and a manufacturing method thereof. Background technique [0002] Organic Light Emitting Display (OLED, Organic Light Emitting Display) is a thin-film light-emitting device made of organic semiconductor materials and driven by DC voltage. OLED display technology is different from traditional LCD (Liquid Crystal Display) display methods. No need for a backlight, using very thin coatings of organic materials and glass substrates that emit light when an electric current passes through them, and respond quickly. Moreover, the OLED display screen can be made lighter and thinner, has a larger viewing angle, and can significantly save power. It is considered to be the most likely next-generation new flat-panel display. [0003] The active matrix OLED is equipped with a thin film transistor for controlling the pixel as a switch ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336
Inventor 成军
Owner BOE TECH GRP CO LTD
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