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Storage element and memory device

A storage element and storage layer technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as flowing and difficult current, and achieve the effect of reducing energy consumption, high reliability, and sufficient operating margin

Active Publication Date: 2012-07-25
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, since the address lines become more precise as the elements constituting the MRAM become finer, it is difficult to flow a sufficient current

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0080] Embodiments for realizing the present invention will be described in detail below with reference to the accompanying drawings.

[0081]

[0082] [1-1. Overview of Prior Memory Elements]

[0083] [1-2. Structure of Precedent 1]

[0084] [1-3. Experiment on Precedent 1]

[0085] [1-4. Structure of Precedent 2]

[0086] [1-5. Experiment on Precedent 2]

[0087]

[0088] [2-1. Issues related to precedents]

[0089] [2-2. Structure of memory element of the embodiment]

[0090] [2-3. Experiments on memory elements of the examples]

[0091]

[0092]

[0093] [1-1. Overview of Prior Memory Elements]

[0094] First, before explaining the memory element of the present invention, an overview of a memory element that is a precedent that forms the basis of previous memory elements will be described.

[0095] A memory element as a precedent (and a later-described embodiment) performs information recording by reversing the magnetization direction of the memory layer by ...

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PUM

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Abstract

The invention relatest o a storage element and a memory device. The storage element includes a storage layer which has magnetization vertical to the film surface and of which the direction of magnetization changes, a magnetization fixed layer which has magnetization vertical to the film surface serving as a reference of information, and an insulating layer, and the direction of magnetization of the storage layer changes by injecting spin-polarized electrons in the laminated direction of the layer structure so as to perform information recording, the size of an effective demagnetizing field that the storage layer receives is configured to be smaller than a saturated magnetization amount of the storage layer, and a ferromagnetic layer material constituting the storage layer has CoFeB as the base material and an anti-corrosive element is added to the base material.

Description

technical field [0001] The present invention relates to a storage element and a memory device having the storage element, the storage element includes a storage layer and a magnetization fixed layer, and the magnetization direction of the storage layer is changed by the flow of current, the storage layer stores the magnetization state of the ferromagnetic layer as information, and the magnetization The magnetization direction of the pinned layer is fixed. Background technique [0002] In information equipment such as computers, DRAMs having high operating speed and high density are widely used as random access memories. [0003] However, since the DRAM is a volatile memory in which information is lost when power is cut off, a nonvolatile memory in which information is not lost is required. [0004] Therefore, attention has been paid to a magnetic random access memory (MRAM) that records information using magnetization of a magnetic substance as a candidate for a nonvolatile...

Claims

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Application Information

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IPC IPC(8): G11C11/16
CPCH01L43/08H01F10/16H01F10/32H01L43/10G11C11/16H01L27/105H01L29/82G11C11/161G11C11/1675H10B61/22H10N50/85H10N50/10H10N50/01
Inventor 内田裕行细见政功别所和宏大森广之肥后丰浅山彻哉山根一阳
Owner SONY CORP
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