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Regular nitrogen doped graphene and preparation method thereof

A nitrogen-doped graphene and carbon-nitrogen source technology, applied in gaseous chemical plating, metal material coating process, coating, etc., to achieve low economic cost, simple preparation process, and environmental friendliness

Active Publication Date: 2012-07-25
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

(Qu, L.; Liu, Y.; Baek, J.-B.; Dai, L. ACS Nano 2010, 4, 1321-1326. Wei, D.; Liu, Y.; Wang, Y.; Zhang, H.; Huang, L.; Yu, G. Nano Lett. 2009, 9, 1752-1758. Luo, Z.; Lim, S.; Tian, ​​Z.; B.; Fu, C.; Shen, Z.; Yu, T.; Lin, J.J.Mater.Chem.2011, 21, 8038-8044. E.; Zhu, Y.; Tour, J.M.Nature 2010, 468, 549-552.) The disadvantage of this method is that the preparation of nitrogen-doped graphene is carried out at high temperature (800-1000 ° C), which is the same as our current industrial Production expectations of economy, convenience and environmental friendliness run counter to the requirements

Method used

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  • Regular nitrogen doped graphene and preparation method thereof
  • Regular nitrogen doped graphene and preparation method thereof
  • Regular nitrogen doped graphene and preparation method thereof

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preparation example Construction

[0040] The first step, the preparation of catalyst:

[0041] The substrate is ultrasonically cleaned with deionized water, detergent, ethanol, acetone, etc. and then dried, and then processed by chemical vapor deposition, physical vapor deposition, vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition or Deposition techniques such as printing deposit a layer of metal or metal compound (such as zinc sulfide, zinc oxide, gold, silver, copper, iron, cobalt, nickel, etc.) on the surface of the substrate as a catalyst; or gold, Silver, copper, iron, cobalt, nickel and other foils.

[0042] The second step: chemical vapor deposition equipment such as figure 1 As shown, the catalyst is placed in the middle of a clean quartz tube, the middle part of the electric furnace is facing the catalyst, and then the air in the quartz tube is removed by repeated vacuuming three times, or 10-3000 sccm non-oxidizing Gas (such as hydrogen, argon, nitrogen, et...

Embodiment 1

[0046] Example 1. Preparation of nitrogen-doped graphene with regular morphology on a copper-based substrate

[0047] Step 1: Clean the copper foil with deionized water, ethanol, and acetone ultrasonically, then dry it in an oven, and then put it into the quartz tube of the chemical vapor deposition system. Align the center of the high-temperature furnace with the copper foil. The vacuum completely removes the air in the furnace. Through 100sccm H 2 And 20sccm Ar mixed gas as carrier gas, start heating.

[0048] Step 2: When the temperature in the central area of ​​the furnace reaches 300°C, pass the carrier gas through figure 1 6 in the carbon nitrogen source (the carbon nitrogen source is pyridine, and the flow rate of carrier gas is 100sccm H 2 and 20sccm Ar. ) into the reaction system, the reaction begins.

[0049] Step 3: After the reaction is carried out for 5 minutes, change the carrier gas path to not pass through the carbon and nitrogen source, and at the same ti...

Embodiment 2

[0051] Example 2, preparation of nitrogen-doped graphene with regular morphology

[0052] The preparation method is basically the same as in Example 1, except that when the temperature of the electric furnace reaches 200°C, pyridine is introduced as a carbon and nitrogen source, and the scanning electron micrograph of the product is as follows: Figure 6 As shown, the regular tetragonal structure can be seen from the figure, indicating that the product is regular nitrogen-doped graphene.

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Abstract

The invention discloses nitrogen doped graphene with a regular morphology and a preparation method thereof. The nitrogen doped graphene is prepared by adopting a chemical vapor deposition method. The preparation method comprises the following steps of: placing a metal catalyst into a reactor; heating in the non-oxidizing atmosphere to ensure the temperature of the catalyst rises to 200 to 600 DEG C; and then filling carbon and nitrogen sources into the reactor to perform the reaction to obtain the nitrogen doped graphene. The nitrogen doped graphene prepared by the invention is regular nitrogen doped graphene with a quadrangular structure. The layer number of the nitrogen doped graphene can be 1 to 10. The nitrogen doped graphene not only can be of a polycrystal structure, but also can be of a single crystal structure. The method for preparing the nitrogen doped graphene with the regular morphology, which is provided by the invention, has simple process and low economic cost and is environmental-friendly. The nitrogen doped graphene with the regular morphology can be produced in a large scale.

Description

technical field [0001] The invention relates to a regular nitrogen-doped graphene and a preparation method thereof. Background technique [0002] Graphene is the basic unit that constitutes carbon nanotubes, fullerenes, and graphite block materials. Its fascination lies not only in proving the existence of the two-dimensional structure of the monoatomic layer, but also in its excellent mechanical, electrical, optical and chemical properties. It is widely used in microelectronics, composite materials, transparent conductive films and energy storage. and other fields have broad application prospects. Since the first preparation of graphene by Professor Andre K. Geim and researcher Kostya Novoselov in 2004, many physical and chemical methods have been used to prepare high-quality graphene materials . At present, chemical vapor deposition is the main method to prepare large-area high-quality graphene, because of its low cost and easy operation. In recent years, people have p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/44
Inventor 刘云圻薛运周武斌黄丽平陈建毅耿德超于贵
Owner INST OF CHEM CHINESE ACAD OF SCI
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