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Anti-ferroelectric thick film with high breakdown field strength and preparation method

An antiferroelectric, high breakdown technology, applied in lead zirconate-based antiferroelectric thick film and its preparation, development and application of high power and large capacity storage capacitor devices, can solve the problem of poor compactness, high energy loss, breakdown Solve the problems of low breakdown electric field and saturation polarization, and achieve the effect of high breakdown electric field and high saturation polarization

Inactive Publication Date: 2012-07-18
INNER MONGOLIA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the lead zirconate-based antiferroelectric thick film materials obtained by the sol-gel method have poor compactness, resulting in low breakdown electric field and saturation polarization, and high energy loss.

Method used

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  • Anti-ferroelectric thick film with high breakdown field strength and preparation method
  • Anti-ferroelectric thick film with high breakdown field strength and preparation method
  • Anti-ferroelectric thick film with high breakdown field strength and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1. The electrode is LaNiO 3 electrode;

[0024] 2. (Pb 0.97 La 0.02 )(Zr 080 sn 0.18 Ti 0.02 )O 3 Preparation of antiferroelectric thick film

[0025] 1)(Pb 0.97 La 0.02 )(Zr 0.80 sn 0.18 Ti 0.02 )O 3 Preparation of precursor solution

[0026] Lead acetate, lanthanum acetate, tin acetate, titanium isopropoxide and zirconium n-propoxide are used as raw materials, the solvent is glacial acetic acid and water, and the film-forming aid is polyvinylpyrrolidone PVP. Lead acetate [Pb(CH 3 COO) 2 ], lanthanum acetate [La(CH 3 COO) 3 ] and tin acetate [Sn(CH 3 COO) 4 ] According to the stoichiometry of 97:2:18 in the mol ratio of lead, lanthanum, tin, be heated to boiling in glacial acetic acid solution for 10 minutes, after cooling to room temperature, make solution a; Then add in the solution a that makes Zirconium n-propoxide [Zr(OC 3 h 7 ) 4 ] and titanium isopropoxide [Ti[OCH(CH 3 ) 2 ] 4 ], make the mol ratio of lead, zirconium, titanium be 97:80:...

Embodiment 2

[0034] 1. The electrode is LaNiO 3 electrode;

[0035] 2. (Pb 0.97 La 0.02 )(Zr 098 Ti 0.02 )O 3 Preparation of antiferroelectric thick film

[0036] 1)(Pb 0.97 La 0.02 )(Zr 098 Ti 0.02 )O 3 Preparation of precursor solution

[0037] Lead acetate, lanthanum acetate, titanium isopropoxide and zirconium n-propoxide are used as raw materials, the solvent is glacial acetic acid and water, and the film-forming aid is polyvinylpyrrolidone PVP. Lead acetate [Pb(CH 3 COO) 2 ] and lanthanum acetate [La(CH 3 COO) 3 ] According to the molar ratio of 97:2, it was heated in glacial acetic acid solution for 20 minutes, and then cooled to room temperature to obtain solution a. Then zirconium n-propoxide [Zr(OC 3 h 7 ) 4 ] and titanium isopropoxide [Ti[OCH(CH 3 ) 2 ] 4 ] join in the solution a, make the mol ratio of lead, zirconium, titanium be 97:98:2, add the deionized water simultaneously, make the mol ratio of deionized water and lead be 30:1, make solution b; In th...

Embodiment 3

[0045] 1. The bottom electrode is Pt electrode;

[0046] 2. Pb(Zr 087 sn 0.1 Ti 0.03 )O 3 Preparation of antiferroelectric thick film

[0047] 1)Pb(Zr 087 sn 0.1 Ti 0.03 )O 3 Preparation of precursor solution

[0048] Lead acetate, tin acetate, titanium isopropoxide and zirconium n-propoxide are used as raw materials, the solvent is glacial acetic acid and water, and the film-forming aid is polyvinylpyrrolidone PVP. Lead acetate [Pb(CH 3 COO) 2 ] and tin acetate [Sn(CH 3 COO) 4 ] According to the stoichiometric ratio of 100:10, the molar ratio of lead and tin was heated to boiling in glacial acetic acid solution for 20 minutes, and then cooled to room temperature to obtain solution a; then zirconium n-propoxide [Zr(OC 3 h 7 ) 4 ] and titanium isopropoxide [Ti[OCH(CH 3 ) 2 ] 4 ] was added to solution a, so that the molar ratio of lead, zirconium and titanium was 100:87:3, and a certain amount of deionized water was added at the same time, so that the molar rat...

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Abstract

The invention relates to an anti-ferroelectric thick film with high breakdown field strength and a preparation method. The general chemical formula of the anti-ferroelectric thick film is (Pb1-aLa2a / 3)(Zr1-x-ySnxTiy)O3, wherein a is larger than or equal to 0 and smaller than or equal to 0.06, x is larger than or equal to 0 and smaller than or equal to 0.45 and y is larger than or equal to 0 and smaller than or equal to 0.10; polyvinylpyrrolidone (PVP) is adopted as a film forming additive; and the molar ratio of (Pb1-aLa2a / 3)(Zr1-x-ySnxTiy)O3 to PVP is 1: (0.5 to 2). The anti-ferroelectric thick film provided by the invention has high breakdown field strength as well as high saturated polarization strength, and can be applied to high energy density capacitors.

Description

technical field [0001] The invention relates to a lead zirconate-based antiferroelectric thick film with high breakdown field strength and a preparation method thereof, which is especially suitable for the development and application of high-power and large-capacity storage capacitor devices, and belongs to the field of electronic functional materials and devices. Background technique [0002] Multi-ion doped lead zirconate (Pb 1-a La 2a / 3 )(Zr 1-x-y sn x Ti y )O 3 (0≤a≤0.06, 0≤x≤0.45, 0≤y≤0.10) based antiferroelectric materials will undergo an antiferroelectric-ferroelectric phase transition induced by an external electric field. During this phase transition, its crystal structure It will also change, which is manifested as a huge change in the polarization strength of lead zirconate-based antiferroelectric materials macroscopically. Its change is much larger than that of ferroelectric and other dielectric materials under the action of an electric field. It is because...

Claims

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Application Information

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IPC IPC(8): C04B35/48C04B35/491C04B35/493C04B35/624
Inventor 郝喜红王莹杨吉春
Owner INNER MONGOLIA UNIV OF SCI & TECH
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