Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Right-hand nonlinear transmission line microwave frequency multiplication circuit and manufacturing method thereof

A non-linear transmission line, frequency doubling circuit technology, applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problem of large influence of harmonic bias voltage, improve harmonic output power, simplify peripheral bias circuit, the effect of increasing harmonic conversion efficiency

Active Publication Date: 2012-07-11
北京中科微投资管理有限责任公司
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The structural circuit has the following fixed defects: via hole and back gold process need to be used; the Schottky diode is reversed or surface-mounted on the high-frequency substrate; a bias circuit needs to be provided for the Schottky diode; The external bias voltage of the base diode has a great influence

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Right-hand nonlinear transmission line microwave frequency multiplication circuit and manufacturing method thereof
  • Right-hand nonlinear transmission line microwave frequency multiplication circuit and manufacturing method thereof
  • Right-hand nonlinear transmission line microwave frequency multiplication circuit and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The technical solution of the present invention will be described in detail below with reference to the drawings and embodiments.

[0039] Such as figure 1 As shown, figure 1 A right-hand non-linear transmission line microwave frequency multiplication circuit provided by an embodiment of the present invention is composed of 23 right-hand non-linear transmission line units connected in series, and each right-hand non-linear transmission line unit is composed of a parallel Schottky diode and two series connected sections. The same transmission line composition, such as figure 2 Shown. The transmission line is equivalent to the series inductance in the right-hand transmission line, forming a typical right-hand non-linear transmission line that is cascaded by series inductance and shunt capacitance. The relationship between the capacitance of the Schottky diode used in each section of the right-hand nonlinear transmission line and the bias voltage is: C=250fF / (1-V / 0.65) 0.3...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Doping concentrationaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the microwave circuit technology field in micro-electronics and especially relates to a right-hand nonlinear transmission line microwave frequency multiplication circuit based on a plane schottky diode and a manufacturing method thereof. A right-hand nonlinear transmission line microwave frequency multiplication circuit is formed by 23 right-hand nonlinear transmission line units which are connected in series with each other. The each right-hand nonlinear transmission line unit is formed by the parallel schottky diodes and two segments of the same transmission lines which are connected in series. By using the right-hand nonlinear transmission line microwave frequency multiplication circuit provided in the invention, a circuit structure can be optimized; a peripheral bias circuit can be simplified. By using the manufacturing method of the right-hand nonlinear transmission line microwave frequency multiplication circuit provided in the invention, a corresponding circuit manufacturing technology can be simplified so as to improve harmonic output power of the frequency multiplication circuit. Harmonic wave conversion efficiency can be increased. A narrow-band harmonic-wave output characteristic can be improved and a harmonic wave output purity can be increased too. The method has many other characteristics.

Description

Technical field [0001] The invention relates to the technical field of microwave circuits in microelectronics, in particular to a right-hand nonlinear transmission line microwave frequency multiplication circuit based on a planar Schottky diode and a manufacturing method thereof. Background technique [0002] As the operating frequency of the system extends to the microwave and millimeter wave bands, the required frequency becomes higher and higher. However, due to the influence of factors such as components and output power, there is often a lack of stable and effective signal sources in the microwave frequency band. The low frequency signal source with low output power and high frequency stability can achieve frequency multiplication through nonlinear devices, such as varactor diodes, high electron mobility transistors, and heterojunction bipolar transistors. High-frequency frequency multipliers are widely used in the generation of microwave signal sources. Microwave frequency ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03B19/00H01L21/8252H01L21/329
Inventor 黄杰董军荣杨浩张海英田超
Owner 北京中科微投资管理有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com