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Non-polar GaN thin film grown on LiGaO2 substrate, as well as manufacturing method and application thereof

A non-polar, substrate-based technology, applied in the field of non-polar GaN thin film and its preparation, can solve the problems of reduced carrier radiation recombination efficiency, unstable LED luminous wavelength, and affecting LED luminous efficiency, so as to eliminate quantum confinement Stark Effect, Ease of Obtaining, Effect of Improving Luminous Efficiency

Inactive Publication Date: 2012-07-04
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the polar plane of GaN, the centroids of the Ga atom assembly and the N atom assembly do not coincide, thereby forming an electric dipole, generating a spontaneous polarization field and a piezoelectric polarization field, and then causing the Quantum-confined Stark effect (Quantum-confined Stark effect). Starker Effect, QCSE), which separates electrons and holes, and reduces the radiative recombination efficiency of carriers, which ultimately affects the luminous efficiency of LEDs and causes instability of LED luminous wavelengths.

Method used

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  • Non-polar GaN thin film grown on LiGaO2 substrate, as well as manufacturing method and application thereof
  • Non-polar GaN thin film grown on LiGaO2 substrate, as well as manufacturing method and application thereof
  • Non-polar GaN thin film grown on LiGaO2 substrate, as well as manufacturing method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This example grows on LiGaO 2 The preparation method of the nonpolar GaN film on the substrate comprises the following steps:

[0035] (1) Select substrate and crystal orientation: use LiGaO 2 The substrate, the crystal orientation is (100) crystal plane deflected to (110) direction by 0.2°.

[0036] (2) Perform annealing treatment on the substrate: bake the substrate at 900° C. for 3-5 hours, and then cool it to room temperature in air.

[0037] (3) Clean the surface of the substrate: LiGaO 2The substrate was ultrasonically cleaned in deionized water for 5 minutes at room temperature to remove LiGaO 2 The dirt particles on the surface of the substrate are washed with hydrochloric acid, acetone, and ethanol in sequence to remove surface organic matter; the cleaned LiGaO 2 The substrate was blown dry with high-purity dry nitrogen; after that, the LiGaO 2 Put the substrate into a low-temperature molecular beam epitaxy growth chamber, raise the substrate temperature t...

Embodiment 2

[0046] This example grows on LiGaO 2 The preparation method of the nonpolar GaN film on the substrate comprises the following steps:

[0047] (1) Select substrate and crystal orientation: use LiGaO 2 The substrate, the crystal orientation is (100) crystal plane deflected to (110) direction by 0.2°.

[0048] (2) Perform annealing treatment on the substrate: bake the substrate at a high temperature of 1000° C. for 5 hours, and then air-cool to room temperature.

[0049] (3) Clean the surface of the substrate: LiGaO 2 The substrate was ultrasonically cleaned in deionized water for 10 minutes at room temperature to remove LiGaO 2 The dirt particles on the surface of the substrate are washed with hydrochloric acid, acetone, and ethanol in sequence to remove surface organic matter; the cleaned LiGaO 2 The substrate was blown dry with high-purity dry nitrogen; after that, the LiGaO 2 The substrate is placed in a low-temperature molecular beam epitaxy growth chamber. Under ultra-...

Embodiment 3

[0054] This example grows on LiGaO 2 The preparation method of the nonpolar GaN film on the substrate comprises the following steps:

[0055] (1) Select substrate and crystal orientation: use LiGaO 2 The substrate, the crystal orientation is (100) crystal plane deflected to (110) direction by 0.2°.

[0056] (2) Annealing the substrate: the substrate was baked at a high temperature of 950° C. for 4 hours, and then air-cooled to room temperature.

[0057] (3) Clean the surface of the substrate: LiGaO 2 The substrate was ultrasonically cleaned in deionized water for 8 minutes at room temperature to remove LiGaO 2 The dirt particles on the surface of the substrate are washed with hydrochloric acid, acetone, and ethanol in sequence to remove surface organic matter; the cleaned LiGaO 2 The substrate was blown dry with high-purity dry nitrogen; after that, the LiGaO 2 Put the substrate into a low-temperature molecular beam epitaxy growth chamber, raise the substrate temperature ...

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Abstract

The invention discloses a non-polar GaN thin film grown on a LiGaO2 substrate. The non-polar GaN thin film comprises a non-polar m-surface GaN buffer layer and a non-polar m-surface GaN layer, wherein the non-polar m-surface GaN buffer layer is grown on the LiGaO2 substrate, and the non-polar m-surface GaN layer is grown on the non-polar m-surface GaN buffer layer; the non-polar m-surface GaN buffer layer is a GaN film layer growing when the temperature of the LiGaO2 substrate is 220-350 DEG C; and the non-polar m-surface GaN layer is a GaN film layer growing when the temperature of the LiGaO2 substrate is 600-750 DEG C. The invention further discloses a manufacturing method and an application of the non-polar GaN thin film. Compared with the prior art, the non-polar GaN thin film disclosed by the invention has the advantages of simple growth process and low manufacturing cost; and in addition, the manufactured non-polar GaN thin film has low defect density and good crystallization quality.

Description

technical field [0001] The present invention relates to non-polar GaN thin film and preparation method thereof, particularly relate to the growth on LiGaO 2 Non-polar GaN thin film on substrate and its preparation method and application. Background technique [0002] LED is called the fourth-generation lighting source or green light source. It has the characteristics of energy saving, environmental protection, long life, and small size. It can be widely used in various general lighting, indication, display, decoration, backlight, and urban night scenes. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lighting, the application of LED light-emitting products is attracti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/32H01L33/00H01L31/0304H01L31/18
CPCY02P70/50
Inventor 李国强杨慧
Owner SOUTH CHINA UNIV OF TECH
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