Inclined entering gas spray header applied to metal organic chemical vapor deposition reactor

Abstract

Provided is an inclined entering gas spray header applied to a metal organic chemical vapor deposition reactor, comprising a gas jet tray arranged above the reaction chamber, a gas connecting board arranged above the gas jet tray, and at least two laminated gas distribution boards arranged between the gas connecting board and the gas jet tray, wherein the gas connecting board is provided with a plurality of gas interfaces and cooling liquid interfaces; the gas distribution boards and the gas jet tray are provided with a plurality of mutually isolated gas channels; and the gas channels include a first forebody gas channel, a second forebody gas channel, and the carrier gas channel which are communicated to the corresponding gas interfaces as well as a cooling liquid channel communicated to the cooling liquid interface. The inclined entering gas spray header overcomes the reactant exhaustion along the airflow direction of a horizontal reactor and avoids the defect of uneasiness of forming a stable layer flow in a vertical reactor.

Description

technical field [0001] The invention relates to a gas distribution device for chemical vapor deposition, in particular to an oblique-entry gas shower head for metal organic chemical vapor deposition reactors. Background technique [0002] MOCVD (Metal Organic Chemical Vapor Deposition) equipment, that is, Metal Organic Chemical Vapor Deposition equipment, plays an irreplaceable role in the semiconductor industry, especially in the LED industry, and is a particularly critical equipment. The equipment integrates various disciplines such as computational fluid dynamics, heat transfer, system integration control, and compound growth. It is a high-tech and high-tech equipment; it is a strategic high-tech semiconductor that breaks through the bottleneck of industrial development and improves the industrial level. equipment. [0003] MOCVD reacts the metal organic source (MO) containing group II or group III elements with the gas source containing group VI or group V elements on t...

AI Technical Summary

Problems solved by technology

[0008] It overcomes the problem that the reactants in the horizontal reactor are exhausted along the gas flow direction, and also avoids the disadvantage that it is not easy to form a stable laminar flow in the vertical reactor. The present invention aims to provide a method for metal organic chemical vapor phase The oblique-entry gas shower head of the deposition reactor combines the advantages of easy formation of laminar flow in the horizontal reactor and consistent concentration of each reactant on the wafer in the vertical reactor

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