Surface-enhanced Raman scattering active substrate based on carbon nanometer pipe arrays and metal nanometer particles

A technology of carbon nanotube arrays and metal nanoparticles, which is applied in the field of nanophotonics, can solve the problems of small surface area of ​​Raman scattering active substrates, and achieve the effect of low preparation cost, simple production and low cost

Inactive Publication Date: 2012-07-04
CHONGQING UNIV
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Problems solved by technology

[0007] The purpose of the present invention is to solve the problem of small surface area of ​​surface-enhanced Raman scattering active substrates, and proposes a new method of su

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  • Surface-enhanced Raman scattering active substrate based on carbon nanometer pipe arrays and metal nanometer particles
  • Surface-enhanced Raman scattering active substrate based on carbon nanometer pipe arrays and metal nanometer particles
  • Surface-enhanced Raman scattering active substrate based on carbon nanometer pipe arrays and metal nanometer particles

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Embodiment Construction

[0016] The present invention will be further elaborated below in conjunction with accompanying drawing:

[0017] see figure 1 , the surface-enhanced Raman scattering active substrate based on carbon nanotube arrays and metal nanoparticles designed by the present invention includes a silicon substrate 1-1, a catalytic layer 1-2 for growing carbon nanotube arrays, a carbon nanotube array 1-3, and an attached Metallic nanoparticles on carbon nanotube array surfaces 1-4. The schematic diagram of the surface structure of the formed active substrate is as follows: figure 2 As shown, the equivalent diameter d of carbon nanotube arrays 1-3 c , the diameter d of metal nanoparticles 1–4 m , the period of carbon nanotube arrays 1-3 is d cc .

[0018] see image 3 ,Depend on figure 1 Substrate 1-1, catalytic layer 1-2 for growing carbon nanotube array, carbon nanotube array 1-3, metal nanoparticles 1-4 attached to the surface of carbon nanotube array, forming surface-enhanced Rama...

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Abstract

The invention relates to a method for realizing a surface-enhanced Raman scattering active substrate based on carbon nanometer pipe arrays and metal nanometer particles. The method includes: utilizing the carbon nanometer pipe arrays arranged perpendicularly as nanometer metal structural carriers with large superficial area, depositing precious metal nanometer particles on the nanometer pipe carriers to form a surface-enhanced Raman scattering active substrate, attaching molecules to be detected onto the surface of rough metal, and irradiating the surfaces of the molecules to be detected by excitation light to enhance Raman scattering signals of the molecules evidently. The surface-enhanced Raman scattering active substrate is simple in manufacturing process, low in cost and free of pollution, the superficial area of the carbon nanometer pipe arrays is large, packing effect of metal nanometer particles is effectively improved, thereby the sectional area of Raman scattering is enlarged and the enhanced intensity of the Raman scattering signals is higher.

Description

technical field [0001] The invention belongs to the field of nanophotonics, and in particular relates to surface-enhanced Raman scattering spectroscopy technology. Background technique [0002] Raman scattering is an inelastic scattering phenomenon of photons. When a beam of light is irradiated on a substance, the photons will be scattered by the atoms or molecules that make up the substance, and most of the scattered photons will be scattered with the original frequency energy. This part of the scattering belongs to elastic scattering, that is, the scattered light is related to the excitation The components with the same wavelength of light are called Rayleigh scattering. However, the energy of a small part of the scattered photons will become larger or smaller, that is, the scattered light has components longer and shorter than the wavelength of the excitation light (about 10% of the total scattered light -10 -10 -6 Scattering), this kind of scattering belongs to inelas...

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Application Information

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IPC IPC(8): B81B7/04B81C1/00G01N21/65
Inventor 张洁王宁陈俞霖韦玮朱永
Owner CHONGQING UNIV
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