Polishing solution capable of improving surface quality of polished phase transition material

Abstract

The invention provides a chemically mechanical polishing solution for a phase transition memory. The polishing solution comprises, calculated by a total weight of the polishing solution, 0.1-30 wt% of polishing particle, 0.01-10 wt% of oxidizing agent, 0.001-5 wt% of surface improving agent and aqueous medium. Using the polishing solution provided by the invention to carry out polishing treatment on a phase transition memory member can obviously improve surface quality of the polished phase transition material and realize control on low surface roughness less than 1 nm and micro defects (corrosion pit, residual, scratch and polishing mist, etc.).

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid which can improve the surface quality of a phase change material after polishing. Background technique [0002] With the launch of Samsung's 512M phase-change memory products in 2009, phase-change memory has the advantages of high-speed reading, high erasable times, non-volatility, small component size, low power consumption, strong vibration resistance and radiation resistance. It is considered to be the most competitive next-generation non-volatile memory at present. [0003] In the process of constructing phase-change memory cells, chemical-mechanical polishing (CMP) process is a key step in order to confine phase-change materials in nanopores to achieve high density and low power consumption. In this step, it is necessary to use CMP to remove the phase change material outside the nanopores, while reducing the loss of the underly...

AI Technical Summary

Problems solved by technology

[0005] Because phase change materials are usually Ge, Sb, and Te multi-alloys, it is easier to achieve the requirements of removal rate and polishing selectivity by selecting appropriate oxidants, chelating agents, and inhibitors; There are differences in activity, and micro-defects such as scratches, residues, and interface damage are often caused after polishing

Microdefects are often difficult to resolve when using conventional polishing fluids

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